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Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs
期刊论文
MICROELECTRONICS RELIABILITY, 2023, 卷号: 149
作者:
Yu, Cheng-hao
;
Guo, Hao-min
;
Liu, Yan
;
Wu, Xiao-dong
;
Zhang, Li-long
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2023/11/10
Depletion-mode
Single-event burnout (SEB)
Single-event gate rupture
Design of DC Magnet Power Supply System for ITER Static Magnetic Field Test Facility
期刊论文
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2022
作者:
Deng, Xi
;
Jiang, Li
;
Huang, Ya
;
Gao, Ge
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2022/12/23
Inductors
Topology
Switches
Power supplies
Switching frequency
Harmonic analysis
Buck converters
Interleaving parallel buck converter
International Thermonuclear Experimental Reactor (ITER)
large output capability
multilevel
static magnetic field (SMF) test facility
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
Comparative Study of SiC Planar MOSFETs With Different p-Body Designs
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 3, 页码: 1071-1076
作者:
Weijiang Ni
;
Xiaoliang Wang
;
Miaoling Xu
;
Mingshan Li
;
Chun Feng
;
Hongling Xiao
;
Lijuan Jiang
;
Wei Li
;
Quan Wang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2021/11/05
Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs
期刊论文
PHYSICAL REVIEW APPLIED, 2020, 卷号: 13, 期号: 2, 页码: 024020
作者:
Feilong Liu
;
Yue-Yang Liu
;
Ling Li
;
Guofu Zhou
;
Xiangwei Jiang
;
Jun-Wei Luo
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2021/11/30
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling
期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:
Cheng H(程贺)
;
Liu TF(刘铁锋)
;
Zhang C(张超)
;
Liu ZF(刘志峰)
;
Yang ZJ(杨志家)
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2020/07/11
ballistic transport
cylindrical gate-allaround (GAA) MOSFET
compact model
Wentzel-Kramers-Brillouin (WKB) approximation
the source-to-drain tunneling
A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 2002-2006
作者:
Ren, Yu
;
Yang, Xu
;
Zhang, Fan
;
Wang, Fei
;
Tolbert, Leon M.
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2019/11/19
Gate drivers
Integrated circuit reliability
MOS-FET
Series connections
SiC MOSFET
Solid State Circuit Breaker
Voltage balancing
Wide band gap devices
Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 249-254
作者:
Yongwei Chang
;
Jiexin Luo
;
Jing Chen
;
Lingda Xu
;
Zhan Chai
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/13
MOSFET
circuits
Integrated
circuit
modeling
Semiconductor
device
modeling
Radio
frequency
MOSFET
Analytical
models
Mathematical
model
Body
contact
compact
model
floating
body
effects
(FBEs)
impact
ionization
partially
depleted
silicon-on-insulator
(PD-SOI)
radio
frequency
(RF)
tunnel
diode
body
contact
(TDBC)
Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects
期刊论文
IOP Conference Series: Materials Science and Engineering, 2019, 卷号: 504, 期号: 1
作者:
Islam, A.*
;
Kalna, K.
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/28
Recent progress in diamond-based MOSFETs
期刊论文
International Journal of Minerals, Metallurgy, and Materials, 2019, 卷号: 26, 期号: 10, 页码: 1195-1205
作者:
Xiao-lu Yuan
;
Yu-ting Zheng
;
Xiao-hua Zhu
;
Jin-long Liu
;
Jiang-wei Liu
;
Cheng-ming Li
;
Peng Jin
;
Zhan-guo Wang
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/07/31
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