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	Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects
	Islam, A.*; Kalna, K.
刊名	IOP Conference Series: Materials Science and Engineering
	2019
卷号	504期号:1
ISSN号	1757-8981
DOI	10.1088/1757-899X/504/1/012021
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5744867
专题	中南林业科技大学
作者单位	Electronic Engineering, Bangor College China, Central South University Forestry and Technology, China
推荐引用方式 GB/T 7714	Islam, A.*,Kalna, K.. Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects[J]. IOP Conference Series: Materials Science and Engineering,2019,504(1).
APA	Islam, A.*,&Kalna, K..(2019).Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects.IOP Conference Series: Materials Science and Engineering,504(1).
MLA	Islam, A.*,et al."Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects".IOP Conference Series: Materials Science and Engineering 504.1(2019).

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