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科研机构
半导体研究所 [34]
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会议论文 [34]
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2008 [4]
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光电子学 [16]
半导体材料 [10]
半导体物理 [8]
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浏览/检索结果:
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内容类型:会议论文
专题:半导体研究所
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Characteristics of triangle and square InP/InGaAsP microlasers
会议论文
10th international conference on transparent optical networks, athens, greece, jun 22-26, 2008
作者:
Yu LJ
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2010/03/09
semiconductor lasers
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
Advances in high power semiconductor diode lasers - art. no. 682402
会议论文
conference on semiconductor lasers and applications iii, beijing, peoples r china, nov 12-13, 2007
Ma, XY
;
Zhong, L
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
laser diodes
laser bar
stacks
high power
power conversion efficiency
reliability
packaging
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R
会议论文
conference on advanced materials and devices for sensing and imaging iii, beijing, peoples r china, nov 12-14, 2007
Wang, XH
;
Wan, XL
;
Xiao, HL
;
Feng, C
;
Way, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/03/09
hydrogen sensor
AlGaN/GaN heterostructure
Schottky diode
Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I
会议论文
conference on nanophotonic materials iii, san diego, ca, aug 13-14, 2006
作者:
Pan JQ
收藏
  |  
浏览/下载:154/17
  |  
提交时间:2010/03/29
InP
Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE
会议论文
12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006
Feng, W (Feng, W.)
;
Pan, JQ (Pan, J. Q.)
;
Zhou, F (Zhou, F.)
;
Zhao, LJ (Zhao, L. J.)
;
Zhu, HL (Zhu, H. L.)
;
Wang, W (Wang, W.)
收藏
  |  
浏览/下载:93/15
  |  
提交时间:2010/03/29
BURIED-HETEROSTRUCTURE LASERS
BANDGAP ENERGY CONTROL
VAPOR-PHASE EPITAXY
PRESSURE MOVPE
CONVERTER
Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:
Zhang YH
;
Jiang DS
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
quantum wells
GaAsSb/GaAs
GAAS
LASERS
GAIN
Study on optical band gap of boron-doped nc-Si : H film
会议论文
symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Wei WS
;
Wang TM
;
Zhang CX
;
Li GH
;
Han HX
;
Ding K
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2010/11/15
AMORPHOUS-SILICON
Simulation and fabrication of thermo-optic variable optical attenuators based on multimode interference coupler
会议论文
symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Yang L
;
Liu YL
;
Li F
;
Cheng Y
;
Qiu HJ
;
Wang QM
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
WAVE-GUIDES
Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films
会议论文
symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Chen CY
;
Chen WD
;
Song SF
;
Hsu CC
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
HYDROGENATED AMORPHOUS-SILICON
PHOTOLUMINESCENCE
LUMINESCENCE
INTENSITY
SYSTEM
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