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科研机构
半导体研究所 [16]
内容类型
期刊论文 [15]
会议论文 [1]
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2011 [1]
2009 [3]
2008 [1]
2006 [1]
2003 [1]
2002 [2]
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半导体物理 [16]
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Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
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  |  
浏览/下载:35/2
  |  
提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface
期刊论文
physica e-low-dimensional systems & nanostructures, 2009, 卷号: 42, 期号: 2, 页码: 150-153
作者:
Chen L
;
Zhang XH
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  |  
浏览/下载:33/0
  |  
提交时间:2010/04/04
Fe thin film
Anisotropic strain relaxation
Magnetic anisotropy
X-ray diffraction
UNIAXIAL MAGNETIC-ANISOTROPY
EPITAXIAL-GROWTH
GAAS(001)
DEVICES
Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 041001
作者:
Hao GD
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  |  
浏览/下载:129/28
  |  
提交时间:2010/03/08
CONTINUOUS-WAVE OPERATION
QUANTUM-WELLS
LASER-DIODES
ORIENTATION
SEMICONDUCTORS
DEPENDENCE
ANISOTROPY
SEMIPOLAR
SAPPHIRE
FILMS
Optical study of lateral carrier transfer in (In,Ga)As/GaAs quantum-dot chains
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 1, 页码: art. no. 011107
Wang, BR
;
Sun, BQ
;
Ji, Y
;
Dou, XM
;
Xu, ZY
;
Wang, ZM
;
Salamo, GJ
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  |  
浏览/下载:104/2
  |  
提交时间:2010/03/08
LOCALIZED STATES
ISLANDS
WIRES
SUPERLATTICES
ORGANIZATION
GAAS(100)
EXCITONS
GROWTH
DECAY
GAAS
Corrugated surfaces formed on GaAs(331)A substrates: the template for laterally ordered InGaAs nanowires
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 4, 页码: 1140-1145
Gong Z
;
Niu ZC
;
Fang ZD
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  |  
浏览/下载:73/0
  |  
提交时间:2010/04/11
MOLECULAR-BEAM EPITAXY
QUANTUM-DOT SUPERLATTICES
VICINAL GAAS(001)
GAAS
WIRES
POLARIZATION
GROWTH
WELLS
TEMPERATURE
MECHANISM
Self-organized InAs quantum wires on GaAs (331)A substrates
期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 10, 页码: 1819-1821
Gong Z
;
Fang ZD
;
Miao ZH
;
Niu ZC
;
Feng SL
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  |  
浏览/下载:265/2
  |  
提交时间:2010/08/12
DOTS
PHOTOLUMINESCENCE
Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy
期刊论文
physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321
作者:
Ye XL
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  |  
浏览/下载:66/0
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
EXCITON LOCALIZATION
INVERSION ASYMMETRY
COMMON-ATOM
LIGHT-HOLE
HETEROSTRUCTURES
SUPERLATTICES
POLARIZATION
SEGREGATION
MORPHOLOGY
Interlayer segregation of Cu atoms in Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers and its influence on magnetic properties
期刊论文
journal of applied physics, 2002, 卷号: 91, 期号: 6, 页码: 3759-3763
Yu GH
;
Li MH
;
Zhu FW
;
Li QK
;
Zhang Y
;
Chai CL
;
Jiang HW
;
Lai WY
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  |  
浏览/下载:86/1
  |  
提交时间:2010/08/12
EXCHANGE BIAS
GIANT MAGNETORESISTANCE
UNIDIRECTIONAL ANISOTROPY
FILMS
BILAYERS
LAYERS
FIELD
MODEL
DEPENDENCE
INTERFACES
Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates
期刊论文
journal of vacuum science & technology b, 2000, 卷号: 18, 期号: 4, 页码: 2271-2273
Yang Z
;
Sou IK
;
Chen YH
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  |  
浏览/下载:54/0
  |  
提交时间:2010/08/12
REFLECTANCE DIFFERENCE SPECTROSCOPY
ZNSE/GAAS INTERFACE
STATES
GAAS
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