Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy
Ye XL
刊名physical review b
2002
卷号66期号:19页码:art.no.195321
关键词MOLECULAR-BEAM EPITAXY EXCITON LOCALIZATION INVERSION ASYMMETRY COMMON-ATOM LIGHT-HOLE HETEROSTRUCTURES SUPERLATTICES POLARIZATION SEGREGATION MORPHOLOGY
ISSN号1098-0121
通讯作者chen yh,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要the in-plane optical anisotropies of a series of gaas/alxga1-xas single-quantum-well structures have been observed at room temperature by reflectance difference spectroscopy. the measured degree of polarization of the excitonic transitions is inversely proportional to the well width. numerical calculations based on the envelope function approximation incorporating the effect of c-2v-interface symmetry have been performed to analyze the origin of the optical anisotropy. good agreement with the experimental data is obtained when the optical anisotropy is attributed to anisotropic-interface structures. the fitted interface potential parameters are consistent with predicted values.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11698]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Ye XL. Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy[J]. physical review b,2002,66(19):art.no.195321.
APA Ye XL.(2002).Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy.physical review b,66(19),art.no.195321.
MLA Ye XL."Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy".physical review b 66.19(2002):art.no.195321.
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