Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy | |
Ye XL | |
刊名 | physical review b |
2002 | |
卷号 | 66期号:19页码:art.no.195321 |
关键词 | MOLECULAR-BEAM EPITAXY EXCITON LOCALIZATION INVERSION ASYMMETRY COMMON-ATOM LIGHT-HOLE HETEROSTRUCTURES SUPERLATTICES POLARIZATION SEGREGATION MORPHOLOGY |
ISSN号 | 1098-0121 |
通讯作者 | chen yh,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
中文摘要 | the in-plane optical anisotropies of a series of gaas/alxga1-xas single-quantum-well structures have been observed at room temperature by reflectance difference spectroscopy. the measured degree of polarization of the excitonic transitions is inversely proportional to the well width. numerical calculations based on the envelope function approximation incorporating the effect of c-2v-interface symmetry have been performed to analyze the origin of the optical anisotropy. good agreement with the experimental data is obtained when the optical anisotropy is attributed to anisotropic-interface structures. the fitted interface potential parameters are consistent with predicted values. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/11698] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Ye XL. Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy[J]. physical review b,2002,66(19):art.no.195321. |
APA | Ye XL.(2002).Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy.physical review b,66(19),art.no.195321. |
MLA | Ye XL."Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy".physical review b 66.19(2002):art.no.195321. |
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