CORC

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CORC

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Tensile and compressive mechanical behavior of twinned silicon carbide nanowires 期刊论文
acta materialia, 2010, 卷号: 58, 期号: 6, 页码: 1963-1971
作者:  Li JB
收藏  |  浏览/下载：63/1  |  提交时间：2010/04/22
Fine structural splitting and exciton spin relaxation in single InAs quantum dots 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103516
Dou XM; Sun BQ; Xiong YH; Niu ZC; Ni HQ; Xu ZY
收藏  |  浏览/下载：99/0  |  提交时间：2010/03/08
Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 5, 页码: art. no. 055310
作者:  Ye XL;  Pan JQ;  Liang S
收藏  |  浏览/下载：127/30  |  提交时间：2010/03/08
Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文
applied physics letters, 2003, 卷号: 83, 期号: 4, 页码: 677-679
作者:  Zhao DG
收藏  |  浏览/下载：1038/2  |  提交时间：2010/08/12
Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文
10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001
Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL
收藏  |  浏览/下载：12/0  |  提交时间：2010/10/29
New method for the growth of highly uniform quantum dots 会议论文
2nd international conference on low dimensional structures and devices, lisbon, portugal, may 19-21, 1997
Pan D; Zeng YP; Kong MY
收藏  |  浏览/下载：9/0  |  提交时间：2010/11/15
INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS 期刊论文
communications in theoretical physics, 1993, 卷号: 20, 期号: 2, 页码: 159-170
WANG JQ; GU ZQ; LI MF; LAI WY
收藏  |  浏览/下载：20/0  |  提交时间：2010/11/15
INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS 期刊论文
physical review b, 1992, 卷号: 46, 期号: 19, 页码: 12358-12364
WANG JQ; GU ZQ; LI MF; LAI WY
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15

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