Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy

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	Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy
	Niu ZC ; Wang XD ; Miao ZH ; Lan Q ; Kong YC ; Zhou DY ; Feng SL
	2001
会议名称	10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10)
会议日期	may 27-31, 2001
会议地点	kanazawa, japan
关键词	molecular beam epitaxy InGaAs islands photolumineseence line-width 1.3 MU-M INAS/GAAS QUANTUM DOTS OPTICAL-PROPERTIES CAP LAYER GAAS LUMINESCENCE STRAIN
页码	165-167
通讯作者	niu zc chinese acad sci inst semicond natl lab superlattices & microstruct pob 912 beijing 100083 peoples r china.
中文摘要	1.3 mum wavelength in(ga)as/gaas nanometer scale islands grown by molecular beam epitaxy (mbe) were characterized by photoluminescence (pl) and atomic force microscopy (afm) measurements. it is shown that inhomogeneous broadening of optical emission due to fluctuation of the in0.5ga0.5as islands both in size and in compositions can be effectively suppressed by introducing a alas layer and a strain reduction in0.2ga0.8as layer overgrown on top of the islands, 1.3mum emission wavelength with narrower line-width less than 20mev at room temperature was obtained.
英文摘要	1.3 mum wavelength in(ga)as/gaas nanometer scale islands grown by molecular beam epitaxy (mbe) were characterized by photoluminescence (pl) and atomic force microscopy (afm) measurements. it is shown that inhomogeneous broadening of optical emission due to fluctuation of the in0.5ga0.5as islands both in size and in compositions can be effectively suppressed by introducing a alas layer and a strain reduction in0.2ga0.8as layer overgrown on top of the islands, 1.3mum emission wavelength with narrower line-width less than 20mev at room temperature was obtained.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:44z (gmt). no. of bitstreams: 0 previous issue date: 2001; kanazawa city.; minist educ, culture, sports, sci & technol.; japan soc promot sci.; izumi sci & technol fdn.; inoue fdn sci.; ishikawa prefecture.; japan adv inst sci & technol.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	kanazawa city.; minist educ, culture, sports, sci & technol.; japan soc promot sci.; izumi sci & technol fdn.; inoue fdn sci.; ishikawa prefecture.; japan adv inst sci & technol.
会议录	proceedings of the 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications, 2
会议录出版者	inst pure applied physics ; daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan
会议录出版地	daini toyokaiji bldg 24-8 shinbashi 4 chome, tokyo, 105-0004, japan
学科主题	半导体物理
语种	英语
ISBN号	4-900526-14-2
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13703]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Niu ZC,Wang XD,Miao ZH,et al. Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy[C]. 见:10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10). kanazawa, japan. may 27-31, 2001.