New method for the growth of highly uniform quantum dots

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	New method for the growth of highly uniform quantum dots
	Pan D ; Zeng YP ; Kong MY
	1998
会议名称	2nd international conference on low dimensional structures and devices
会议日期	may 19-21, 1997
会议地点	lisbon, portugal
关键词	self-formed quantum dot Stranski-Krastanow growth mode superlattice MOLECULAR-BEAM EPITAXY INGAAS GAAS DISLOCATIONS MULTILAYERS DEFECTS STRAIN
页码	79-83
通讯作者	pan d chinese acad sci inst semicond mat ctr pob 912 beijing 100083 peoples r china. 电子邮箱地址: dongpan@red.senu.ac.cn
中文摘要	a new method is realized for the growth of self-formed quantum dots. we identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. unlike the stranski-krastanow (s-k) growth mode, the islands do not form during the growth of the corresponding strained single layers. highly uniform quantum dots can be self-formed via this mechanism. the low temperature spectra of self-formed ingaas/gaas quantum dot superlattices grown on a (001) gaas substrate have a full width at half maximum of 26-34 mev, indicating a better uniformity of quantum dot size than those grown in the s-k mode. this method can provide great degrees of freedom in designing possible quantum dot devices. 1998 published by elsevier science b.v. all rights reserved.
英文摘要	a new method is realized for the growth of self-formed quantum dots. we identify that dislocation-free islands can be formed by the strain from the strained superlattice taken as a whole. unlike the stranski-krastanow (s-k) growth mode, the islands do not form during the growth of the corresponding strained single layers. highly uniform quantum dots can be self-formed via this mechanism. the low temperature spectra of self-formed ingaas/gaas quantum dot superlattices grown on a (001) gaas substrate have a full width at half maximum of 26-34 mev, indicating a better uniformity of quantum dot size than those grown in the s-k mode. this method can provide great degrees of freedom in designing possible quantum dot devices. 1998 published by elsevier science b.v. all rights reserved.; 于2010-11-15批量导入; zhangdi于2010-11-15 17:02:34导入数据到semi-ir的ir; made available in dspace on 2010-11-15t09:02:34z (gmt). no. of bitstreams: 1 3051.pdf: 281448 bytes, checksum: e5cbf3db4b071c0d51fde455977ea963 (md5) previous issue date: 1998; chinese acad sci, inst semicond, mat ctr, beijing 100083, peoples r china
收录类别	CPCI-S
会议录	microelectronic engineering, 43-4
会议录出版者	elsevier science bv ; po box 211, 1000 ae amsterdam, netherlands
会议录出版地	po box 211, 1000 ae amsterdam, netherlands
学科主题	半导体物理
语种	英语
ISSN号	0167-9317
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/15063]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pan D,Zeng YP,Kong MY. New method for the growth of highly uniform quantum dots[C]. 见:2nd international conference on low dimensional structures and devices. lisbon, portugal. may 19-21, 1997.