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CORC

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Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang; Shang, Xiangjun; Li, Mifeng; Zhu, Yan; Chang, Xiuying; Ni, Haiqiao; Xu, Yingqiang; Niu, Zhichuan
收藏  |  浏览/下载：73/0  |  提交时间：2012/06/14
Influence of AlN Buffer Thickness on GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4097-4100
Lin, GQ; Zeng, YP; Wang, XL; Liu, HX
收藏  |  浏览/下载：19/0  |  提交时间：2010/03/08
Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy 期刊论文
journal of crystal growth, 2007, 卷号: 301, 期号: 0, 页码: 971-974
Tangring, I (Tangring, I.); Wang, SM (Wang, S. M.); Sadeghi, M (Sadeghi, M.); Larsson, A (Larsson, A.); Wang, XD (Wang, X. D.)
收藏  |  浏览/下载：62/0  |  提交时间：2010/03/29
1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG
收藏  |  浏览/下载：224/60  |  提交时间：2010/03/29
Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 4, 页码: 1005-1008
作者:  Yang XH
收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11
Liquid-phase-epitaxy-grown InAsxSb1-x/GaAs for room-temperature 8-12 mu m infrared detectors 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.242108
作者:  Zhang XW
收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11
High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy 期刊论文
applied physics letters, 2005, 卷号: 87, 期号: 16, 页码: art.no.161911
Zhang SY; Niu ZC; Ni HQ; Wu DH; He ZH; Sun Z; Han Q; Wu RH
收藏  |  浏览/下载：105/35  |  提交时间：2010/03/17
Photoluminescence characterization of nanocrystalline ZnO array 期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 11, 页码: 2301-2304
Chang YQ; Yu DP; Li GH; Fang ZL; Zhang Y; Chen YF; Yang FH
收藏  |  浏览/下载：121/18  |  提交时间：2010/03/09
Micro-Raman study on hydrogenated protocrystalline silicon films 期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 8, 页码: 1811-1815
Zhang SB; Liao XB; An L; Yang FH; Kong GL; Wang YQ; Xu YY; Chen CY; Diao HW
收藏  |  浏览/下载：55/0  |  提交时间：2010/08/12
InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy 期刊论文
journal of applied physics, 2001, 卷号: 89, 期号: 7, 页码: 4186-4188
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：143/18  |  提交时间：2010/08/12

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