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科研机构
半导体研究所 [191]
内容类型
期刊论文 [180]
会议论文 [11]
发表日期
2011 [8]
2010 [11]
2009 [13]
2008 [9]
2007 [7]
2006 [13]
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半导体物理 [191]
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Molecular beam epitaxy growth of high electron mobility InAs AlSb deep
期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 1, 页码: 013704
Juan Wang, Guo-Wei Wang, Ying-Qiang Xu, Jun-Liang Xing, Wei Xiang, Bao Tang, Yan Zhu, Zheng-Wei Ren, Zhen-Hong He, Zhi-Chuan Niu
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浏览/下载:27/0
  |  
提交时间:2014/03/26
Photoluminescence of CdSe nanowires grown with and without metal catalyst
期刊论文
nano research, 2011, 卷号: 4, 期号: 4, 页码: 343-359
作者:
Tan PH
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浏览/下载:53/5
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提交时间:2011/07/05
CdSe
nanowires
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
SHAPE-SELECTIVE SYNTHESIS
LIQUID-SOLID MECHANISM
OPTICAL-PROPERTIES
SILICON NANOWIRES
SI NANOWIRES
ZNSE NANOWIRES
SEMICONDUCTOR NANOCRYSTALS
STRUCTURAL-PROPERTIES
EPITAXIAL-GROWTH
Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 4, 页码: 43004
He, Jifang
;
Shang, Xiangjun
;
Li, Mifeng
;
Zhu, Yan
;
Chang, Xiuying
;
Ni, Haiqiao
;
Xu, Yingqiang
;
Niu, Zhichuan
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浏览/下载:75/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Buffer layers
Epitaxial growth
Gallium alloys
Gallium arsenide
Germanium
Growth temperature
High resolution transmission electron microscopy
Molecular beam epitaxy
Molecular beams
Semiconducting gallium
Semiconductor device structures
Semiconductor quantum wells
Preparation and photoluminescence study of patterned substrate quantum wires
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.20703
作者:
Yang XH
;
He JF
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浏览/下载:57/7
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提交时间:2011/07/05
V-groove substrate
quantum wires
GaAs
EPITAXIAL-GROWTH
TRANSISTOR
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
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  |  
浏览/下载:20/0
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提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer by Layer Decoupling, and Stability
期刊论文
journal of the american chemical society, 2011, 卷号: 133, 期号: 15, 页码: 5941-5946
作者:
Liu J
;
Tan PH
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浏览/下载:91/4
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提交时间:2011/07/05
FERRIC-CHLORIDE
CHARGE-TRANSFER
SINGLE-LAYER
GRAPHENE
SPECTROSCOPY
SCATTERING
SPECTRA
Study on Optical Properties of Type-II SnO2/ZnS Core/Shell Nanowires
期刊论文
journal of physical chemistry c, 2011, 卷号: 115, 期号: 15, 页码: 7225-7229
作者:
Li JB
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浏览/下载:37/2
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提交时间:2011/07/05
COLLOIDAL NANOCRYSTAL HETEROSTRUCTURES
PHOTOLUMINESCENCE PROPERTIES
LATTICE DYNAMICS
TIN OXIDE
FILMS
NANOSTRUCTURES
SPECTRA
EXCITON
ARRAYS
RUTILE
Tuning Electron Spin States in Quantum Dots by Spin-Orbit Interactions
期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 6, 页码: article no.67303
Liu Y
;
Cheng F
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浏览/下载:41/0
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提交时间:2011/07/05
ARTIFICIAL ATOMS
RESONANCE
MEMORY
LAYERS
WELLS
GATE
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO2(100) by metal organic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: article no.245402
Fu D
;
Zhang R
;
Liu B
;
Xie ZL
;
Xiu XQ
;
Gu SL
;
Lu H
;
Zheng YD
;
Chen YH
;
Wang ZG
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  |  
浏览/下载:35/2
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提交时间:2011/07/05
FUNDAMENTAL-BAND GAP
INDIUM NITRIDE
BUFFER LAYER
DEPENDENCE
SAPPHIRE
MOCVD
First-principles study of UC2 and U2C3
期刊论文
journal of nuclear materials, 2010, 卷号: 396, 期号: 2-3, 页码: 218-222
Shi HL (Shi Hongliang)
;
Zhang P (Zhang Ping)
;
Li SS (Li Shu-Shen)
;
Wang BT (Wang Baotian)
;
Sun B (Sun Bo)
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浏览/下载:78/12
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提交时间:2010/04/21
First-principle calculation
GGA plus U
Elastic constants
Chemical bonding
Valence state
BRILLOUIN-ZONE INTEGRATIONS
CARBIDES
SPECTRA
METALS
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