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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文 journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497 Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH 收藏  |  浏览/下载：85/0  |  提交时间：2010/04/11 photoluminescence  molecular beam epitaxy  quantum wells  nitrides  semiconducting III-V materials  IMPROVED LUMINESCENCE EFFICIENCY  LASER-DIODES  TEMPERATURE  SURFACTANT  EMISSION  NITROGEN  ORIGIN   The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells 会议论文 international workshop on nitride semiconductors (iwn 2002), aachen, germany, jul 22-25, 2002 作者:  Jiang DS 收藏  |  浏览/下载：16/2  |  提交时间：2010/10/29 LUMINESCENCE  LOCALIZATION   Optical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy 期刊论文 acta physica sinica, 2002, 卷号: 51, 期号: 2, 页码: 310-314 Lu LW; Wang ZG; Yang CL; Wang J; Ma ZH; Sou IK; Ge WK 收藏  |  浏览/下载：93/10  |  提交时间：2010/08/12 II-VI semiconductor  self-organized quantum dots  optical and electrical properties  TEMPERATURE-DEPENDENCE  WELL STRUCTURES  LASER-DIODES  PHOTOLUMINESCENCE  SPECTROSCOPY  EPILAYERS  SURFACE  STATES   Linear polarization of photoluminescence in quantum wires 期刊论文 journal of physics-condensed matter, 1997, 卷号: 9, 期号: 24, 页码: 5105-5116 Zheng WH; Xia JB; Cheah KW 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/17 POROUS SILICON LUMINESCENCE  CONFINEMENT  EMISSION  SI   Pressure dependence of the electronic subband structure of strained In0.2Ga0.8As/GaAs MQWs 期刊论文 physica status solidi b-basic research, 1996, 卷号: 198, 期号: 1, 页码: 329-335 Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM 收藏  |  浏览/下载：43/0  |  提交时间：2010/11/17 MULTIPLE QUANTUM-WELLS  HYDROSTATIC-PRESSURE  DEFORMATION POTENTIALS  EXCITON ABSORPTION  PHOTOLUMINESCENCE  SPECTROSCOPY  GAAS   High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells 期刊论文 physical review b, 1996, 卷号: 54, 期号: 19, 页码: 13820-13826 Li GH; Goni AR; Syassen K; Hou HQ; Feng W; Zhou JM 收藏  |  浏览/下载：56/0  |  提交时间：2010/11/17 HYDROSTATIC-PRESSURE  EXCITON ABSORPTION  DEFORMATION POTENTIALS  LAYER SUPERLATTICES  BAND OFFSET  PHOTOLUMINESCENCE  GAAS  SPECTROSCOPY  DEPENDENCE  TEMPERATURE   ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS 期刊论文 journal of applied physics, 1993, 卷号: 74, 期号: 1, 页码: 341-345 FENG SL; KRYNICKI J; ZAZOUI M; BOURGOIN JC; BOIS P; ROSENCHER E 收藏  |  浏览/下载：30/0  |  提交时间：2010/11/15 RESONANT TUNNELING DIODES  CURRENT-VOLTAGE CHARACTERISTICS  QUANTUM-WELLS  ALGAAS GAAS  SUPERLATTICES  LAYERS   STRUCTURAL DEFECTS AND THEIR ELECTRICAL-ACTIVITY IN GERMANIUM IMPLANTED SILICON 期刊论文 nuclear instruments & methods in physics research section b-beam interactions with materials and atoms, 1993, 卷号: 74, 期号: 0, 页码: 127-130 ZHANG JP; FAN TW; GWILLIAM RM; HEMMENT PLF; WEN JQ; QIAN Y; EFEOGLU H; EVANS JH; PEAKER AR 收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15