The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells

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	The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells
	Jiang DS
	2002
会议名称	international workshop on nitride semiconductors (iwn 2002)
会议日期	jul 22-25, 2002
会议地点	aachen, germany
关键词	LUMINESCENCE LOCALIZATION
页码	382-385
通讯作者	jiang ds chinese acad sci inst semicond natl lab superlattices & microstruct pob 912 beijing 100083 peoples r china.
中文摘要	photoluminescence (pl) spectra of gainnas/gaas multiple quantum wells and gainnas epilayers grown on gaas substrate show an apparent "s-shape" temperature-dependence of the of dominant luminescence peak. at low temperature and weak excitation conditions, a pl peak related to nitrogen cluster-induced bound states can be well resolved in the pl spectra. it displays a remarkable red shift of up to 60 mev and is thermally quenched below 100 k with increasing temperature, being attributed to n-cluster induced bound states. the indium incorporation exhibits significant effect on the cluster formation. the rapid thermal annealing treatment at 750 c can essentially remove the bound states-induced peak.
英文摘要	photoluminescence (pl) spectra of gainnas/gaas multiple quantum wells and gainnas epilayers grown on gaas substrate show an apparent "s-shape" temperature-dependence of the of dominant luminescence peak. at low temperature and weak excitation conditions, a pl peak related to nitrogen cluster-induced bound states can be well resolved in the pl spectra. it displays a remarkable red shift of up to 60 mev and is thermally quenched below 100 k with increasing temperature, being attributed to n-cluster induced bound states. the indium incorporation exhibits significant effect on the cluster formation. the rapid thermal annealing treatment at 750 c can essentially remove the bound states-induced peak.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:18z (gmt). no. of bitstreams: 1 2772.pdf: 246171 bytes, checksum: 19e7eae86361ab6a3caf028d5e2590b2 (md5) previous issue date: 2002; res ctr julich.; aixtron.; deutsch forsch gemeinsch.; european off aerosp res & dev.; deutsch gesell kristallwachstum & kristallzucht.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	res ctr julich.; aixtron.; deutsch forsch gemeinsch.; european off aerosp res & dev.; deutsch gesell kristallwachstum & kristallzucht.
会议录	international workshop on nitride semiconductors, proceedings
会议录出版者	wiley-v c h verlag gmbh ; pappelallee 3, w-69469 weinheim, germany
会议录出版地	pappelallee 3, w-69469 weinheim, germany
学科主题	半导体物理
语种	英语
ISBN号	3-527-40434-1
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13577]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS. The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells[C]. 见:international workshop on nitride semiconductors (iwn 2002). aachen, germany. jul 22-25, 2002.