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科研机构
半导体研究所 [32]
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期刊论文 [31]
会议论文 [1]
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2011 [1]
2009 [3]
2008 [2]
2007 [2]
2006 [2]
2005 [1]
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半导体物理 [32]
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Quantum mechanical simulation of electronic transport in nanostructured devices by efficient self-consistent pseudopotential calculation
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.54503
作者:
Jiang XW
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浏览/下载:50/2
  |  
提交时间:2011/07/05
FIELD-EFFECT TRANSISTORS
SEMICONDUCTOR-DEVICES
SILICON DEVICES
MONTE-CARLO
MOSFETS
NANOTRANSISTORS
APPROXIMATION
EQUATIONS
DESIGN
MODELS
Resonant tunneling through S- and U-shaped graphene nanoribbons
期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 41, 页码: art. no. 415203
作者:
Wu ZH
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  |  
浏览/下载:55/2
  |  
提交时间:2010/03/08
CONDUCTANCE
VOLTAGE
RIBBONS
Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 017301
Guo LC
;
Wang XL
;
Xiao HL
;
Ran JX
;
Wang CM
;
Ma ZY
;
Luo WJ
;
Wang ZG
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  |  
浏览/下载:193/43
  |  
提交时间:2010/03/08
CONTENT ALGAN/GAN HETEROSTRUCTURES
CHEMICAL-VAPOR-DEPOSITION
FIELD-EFFECT TRANSISTORS
AL-CONTENT
ALGAN/ALN/GAN HETEROSTRUCTURES
HEMT STRUCTURES
PHASE EPITAXY
SAPPHIRE
GAS
DENSITIES
The bipolar doping of ZnS via native defects and external dopants
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 11, 页码: art. no. 113704
作者:
Li JB
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浏览/下载:131/30
  |  
提交时间:2010/03/08
AUGMENTED-WAVE METHOD
P-TYPE ZNO
POINT-DEFECTS
II-VI
NITROGEN
SEMICONDUCTORS
1ST-PRINCIPLES
COMPENSATION
ENHANCEMENT
A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs
期刊论文
ieee transactions on electron devices, 2008, 卷号: 55, 期号: 7, 页码: 1720-1726
Jiang, XW
;
Deng, HX
;
Luo, JW
;
Li, SS
;
Wang, LW
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  |  
浏览/下载:153/1
  |  
提交时间:2010/03/08
dopant fluctuation
linear combination of bulk band (LCBB)
MOSFET
quantum mechanical
threshold
3-D
Tuning of plasmon propagation in two-dimensional electrons
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 25, 页码: art. no. 251501
Li C
;
Wu XG
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浏览/下载:224/75
  |  
提交时间:2010/03/08
field effect transistors
plasmons
semiconductor heterojunctions
spin-orbit interactions
two-dimensional electron gas
The wave function evolution of an exciton in a bilayer system: Turning on a static in-plane electric field
期刊论文
journal of applied physics, 2007, 卷号: 101, 期号: 6, 页码: art.no.063707
Wang L (Wang Li)
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浏览/下载:47/0
  |  
提交时间:2010/03/29
COUPLED QUANTUM-WELLS
A novel vision chip for high-speed target tracking
期刊论文
japanese journal of applied physics part 1-regular papers brief communications & review papers, 2007, 卷号: 46, 期号: 4b, 页码: 2220-2225
Miao, W (Miao, Wei)
;
Lin, QY (Lin, Qingyu)
;
Wu, NJ (Wu, Nanjian)
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浏览/下载:23/0
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提交时间:2010/03/29
target tracking
A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 10, 页码: 2422-2426
Ma L (Ma Long)
;
Huang YL (Huang Ying-Long)
;
Zhang Y (Zhang Yang)
;
Yang FH (Yang Fu-Hua)
;
Wang LC (Wang Liang-Chen)
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  |  
浏览/下载:24/0
  |  
提交时间:2010/04/11
resonant tunnelling diode (RTD)
high electron mobility transistor (HEMT)
molecular beam epitaxy (MBE)
bistability
self-latching
Fabrication of metallic air bridges using multiple-dose electron beam lithography
期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 20, 页码: art.no.202103
作者:
Liu J
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浏览/下载:64/0
  |  
提交时间:2010/04/11
SILICON
VOLTAGE
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