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科研机构
半导体研究所 [18]
内容类型
期刊论文 [15]
会议论文 [3]
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2009 [4]
2008 [1]
2004 [1]
2003 [1]
2002 [5]
2001 [2]
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半导体物理 [18]
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Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 5, 页码: art. no. 053912
Wang WZ
;
Deng JJ
;
Lu J
;
Sun BQ
;
Wu XG
;
Zhao JH
收藏
  |  
浏览/下载:214/74
  |  
提交时间:2010/03/08
annealing
Curie temperature
ferromagnetic materials
gallium arsenide
III-V semiconductors
magnetic susceptibility
magnetisation
manganese compounds
nanofabrication
nanostructured materials
RKKY interaction
semiconductor thin films
semimagnetic semiconductors
spin dynamics
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
收藏
  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Strain and magnetic anisotropy of as-grown and annealed Fe films on c(4x4) reconstructed GaAs (001) surface
期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 1, 页码: art. no. 013911
作者:
Chen L
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/08
annealing
gallium arsenide
iron
magnetic anisotropy
magnetic epitaxial layers
magnetisation
molecular beam epitaxial growth
transmission electron microscopy
X-ray diffraction
Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature
期刊论文
applied physics letters, 2009, 卷号: 95, 期号: 18, 页码: art.no.182505
作者:
Chen L
;
Qian X
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  |  
浏览/下载:84/39
  |  
提交时间:2010/03/08
annealing
Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles
期刊论文
physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206
Shi LJ
;
Zhu LF
;
Zhao YH
;
Liu BG
收藏
  |  
浏览/下载:217/56
  |  
提交时间:2010/03/08
ab initio calculations
aluminium compounds
annealing
band structure
chromium
Curie temperature
density functional theory
exchange interactions (electron)
ferromagnetic materials
III-V semiconductors
semimagnetic semiconductors
total energy
vacancies (crystal)
Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
会议论文
asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003
Ying-Qiang X
;
Zhang W
;
Niu ZC
;
Wu RG
;
Wang QM
收藏
  |  
浏览/下载:16/1
  |  
提交时间:2010/10/29
GaNAs
SiO2 encapsulation
rapid-thermal-annealing
nitrogen reorganization
MOLECULAR-BEAM EPITAXY
OPTICAL-PROPERTIES
MU-M
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
期刊论文
microelectronic engineering, 2003, 卷号: 66, 期号: 1-4, 页码: 333-339
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
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  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
neutron irradiation
annealing
defects in silicon
SPECTRA
Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing
期刊论文
chinese physics, 2002, 卷号: 11, 期号: 5, 页码: 492-495
Wang YQ
;
Liao XB
;
Diao HW
;
Zhang SB
;
Xu YY
;
Chen CY
;
Chen WD
;
Kong GL
收藏
  |  
浏览/下载:102/13
  |  
提交时间:2010/08/12
polycrystalline silicon film
rapid thermal processing
microstructure
CHEMICAL-VAPOR-DEPOSITION
AMORPHOUS-SILICON
PRESSURE
TRANSISTORS
CRYSTALLIZATION
GROWTH
Effect of rapid thermal annealing and hydrogen plasma treatment on the microstructure and light-emission of silicon-rich oxide film
期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 7, 页码: 1564-1570
Wang YQ
;
Chen WD
;
Chen CY
;
Diao HW
;
Zhang SB
;
Xu YY
;
Kong GL
;
Liao XB
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/08/12
silicon-rich silicon oxide
microstructure
light-emission
rapid thermal annealing
CHEMICAL-VAPOR-DEPOSITION
AMORPHOUS-SILICON
POROUS SILICON
SI
LUMINESCENCE
NANOCRYSTALS
SPECTRA
SYSTEM
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
期刊论文
acta physica sinica, 2002, 卷号: 51, 期号: 2, 页码: 367-371
Lu LW
;
Zhang YH
;
Xu ZT
;
Xu ZY
;
Wang ZG
;
Wang J
;
Ge WK
收藏
  |  
浏览/下载:103/7
  |  
提交时间:2010/08/12
quantum well
rapid thermal annealing
electron emission
DX centers
CRITICAL LAYER THICKNESS
MOLECULAR-BEAM EPITAXY
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