Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

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	Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
	Lu LW ; Zhang YH ; Xu ZT ; Xu ZY ; Wang ZG ; Wang J ; Ge WK
刊名	acta physica sinica
	2002
卷号	51 期号:2 页码:367-371
关键词	quantum well rapid thermal annealing electron emission DX centers CRITICAL LAYER THICKNESS MOLECULAR-BEAM EPITAXY
ISSN号	1000-3290
通讯作者	lu lw,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要	thermal processing of strained in0.2ga0.8as/gaas graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. it is found that rapid thermal annealing can improve the 77k photoluminescence efficiency and electron emission from the active layer, due to the removal of nonradiative centers from the ingaas/gaas interface. because of the interdiffusion of al and ga atoms, rapid thermal annealing increases simultaneously the density of dx centers in the algaas graded layer. the current stressing experiments of postgrowth and annealed laser diodes are indicative of a corresponding increase in the concentration of dx centers, suggesting that dx centers may be responsible for the degradation of laser diode performance.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11986]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Lu LW,Zhang YH,Xu ZT,et al. Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes[J]. acta physica sinica,2002,51(2):367-371.
APA	Lu LW.,Zhang YH.,Xu ZT.,Xu ZY.,Wang ZG.,...&Ge WK.(2002).Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes.acta physica sinica,51(2),367-371.
MLA	Lu LW,et al."Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes".acta physica sinica 51.2(2002):367-371.