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科研机构
半导体研究所 [21]
内容类型
期刊论文 [19]
会议论文 [2]
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2010 [1]
2009 [4]
2008 [1]
2006 [1]
2003 [1]
2002 [2]
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半导体物理 [21]
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Donor-donor binding in In2O3: Engineering shallow donor levels
期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 8, 页码: art. no. 083704
Tang LM (Tang Li-Ming)
;
Wang LL (Wang Ling-Ling)
;
Wang D (Wang Dan)
;
Liu JZ (Liu Jian-Zhe)
;
Chen KQ (Chen Ke-Qiu)
收藏
  |  
浏览/下载:67/0
  |  
提交时间:2010/05/24
AUGMENTED-WAVE METHOD
ELECTRONIC-STRUCTURE
SEMICONDUCTORS
FILMS
ZNSE
ZNTE
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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  |  
浏览/下载:70/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 2, 页码: art. no. 023104
作者:
Zhu JJ
;
Zhang SM
;
Jiang DS
;
Zhao DG
;
Yang H
收藏
  |  
浏览/下载:191/56
  |  
提交时间:2010/03/08
aluminium compounds
claddings
gallium compounds
III-V semiconductors
indium compounds
quantum well lasers
refractive index
waveguide lasers
Strain Effects on the Optical Polarization Properties of R-Plane Wurtzite GaN
期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 4, 页码: art. no. 041001
作者:
Hao GD
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  |  
浏览/下载:129/28
  |  
提交时间:2010/03/08
CONTINUOUS-WAVE OPERATION
QUANTUM-WELLS
LASER-DIODES
ORIENTATION
SEMICONDUCTORS
DEPENDENCE
ANISOTROPY
SEMIPOLAR
SAPPHIRE
FILMS
Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 26, 页码: art. no. 262105
作者:
Zhang XW
;
Yin ZG
;
You JB
收藏
  |  
浏览/下载:99/13
  |  
提交时间:2010/03/08
atomic force microscopy
field emission
hydrogen
II-VI semiconductors
plasma materials processing
sputter deposition
wide band gap semiconductors
work function
zinc compounds
Fabrication and optical characterization of GaN-based nanopillar light emitting diodes
期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3485-3488
Zhu, JH
;
Zhang, SM
;
Sun, X
;
Zhao, DG
;
Zhu, JJ
;
Liu, ZS
;
Jiang, DS
;
Duan, LH
;
Wang, H
;
Shi, YS
;
Liu, SY
;
Yang, H
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  |  
浏览/下载:58/0
  |  
提交时间:2010/03/08
INDUCTIVELY-COUPLED PLASMA
ARRAYS
NANOSTRUCTURES
LUMINESCENCE
NANORODS
Electronic structure of ZnO wurtzite quantum wires
期刊论文
european physical journal b, 2006, 卷号: 49, 期号: 4, 页码: 415-420
Xia JB (Xia J. B.)
;
Zhanga XW (Zhang X. W.)
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  |  
浏览/下载:26/0
  |  
提交时间:2010/04/11
LOW-TEMPERATURE GROWTH
BINDING-ENERGIES
NANOWIRE ARRAYS
PHOTOLUMINESCENCE
PHOTODETECTORS
SPECTROSCOPY
SAPPHIRE
CRYSTAL
GAN
Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique
期刊论文
science in china series g-physics astronomy, 2003, 卷号: 46, 期号: 4, 页码: 437-440
作者:
Zhao DG
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  |  
浏览/下载:198/6
  |  
提交时间:2010/08/12
GaN
x-ray diffraction
thickness
SAPPHIRE
GROWTH
FILMS
Determination of oxidation states in magnetic multilayers
期刊论文
chinese physics letters, 2002, 卷号: 19, 期号: 2, 页码: 266-268
Yu GH
;
Li MH
;
Zhu FW
;
Chai CL
;
Lai WY
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  |  
浏览/下载:84/4
  |  
提交时间:2010/08/12
EXCHANGE-ANISOTROPY
NIO
FILMS
Microstructure of a-SiOx : H
期刊论文
science in china series a-mathematics physics astronomy, 2002, 卷号: 45, 期号: 10, 页码: 1320-1328
Wang YQ
;
Liao XB
;
Diao HW
;
Cheng WC
;
Li GH
;
Chen CY
;
Zhang SB
;
Xu YY
;
Chen WD
;
Kong GL
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/08/12
a-SiOx : H
microstructure
bonding configuration
CHEMICAL-VAPOR-DEPOSITION
AMORPHOUS-SILICON
ELECTRONIC-PROPERTIES
SIO2/SI INTERFACE
OXYGEN
FILMS
VIBRATIONS
ALLOYS
SYSTEM
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