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科研机构
半导体研究所 [66]
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期刊论文 [65]
会议论文 [1]
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2013 [1]
2012 [1]
2011 [2]
2010 [3]
2009 [7]
2008 [12]
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半导体物理 [66]
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Impurity scattering and Friedel oscillations in monolayer black phosphorus
期刊论文
physical review b, 2016, 卷号: 94, 期号: 3, 页码: 035431
Yong-Lian Zou
;
Juntao Song
;
Chunxu Bai
;
Kai Chang
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  |  
浏览/下载:19/0
  |  
提交时间:2017/03/10
Thermoelectric transport through a quantum dot with a magnetic impurity
期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 11, 页码: 117303
Yu, Zhen
;
Guo, Yu
;
Zheng, Jun
;
Chi, Feng
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  |  
浏览/下载:10/0
  |  
提交时间:2014/04/28
Effect of impurity ions configurations on the magnetic properties of Mn-doped ZnO
期刊论文
physica b-condensed matter, 2012, 卷号: 407, 期号: 5, 页码: 883-887
Gao, HX
;
Xia, JB
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  |  
浏览/下载:9/0
  |  
提交时间:2013/03/17
The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
期刊论文
physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155
作者:
Li JB
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浏览/下载:59/6
  |  
提交时间:2011/07/05
First principle calculation
Indium nitride
Band gap
Defect
INITIO MOLECULAR-DYNAMICS
AUGMENTED-WAVE METHOD
INDIUM NITRIDE
GAP
PSEUDOPOTENTIALS
SEMICONDUCTORS
IMPURITIES
ABSORPTION
DEFECTS
ALLOYS
Positively charged manganese acceptor disclosed by photoluminescence spectra in an n-i-p-i-n heterostructure with a Mn-doped GaAs base
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93507
作者:
Wang LG
;
Chen L
;
Zhu H
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  |  
浏览/下载:43/5
  |  
提交时间:2011/07/05
GALLIUM-ARSENIDE
SEMICONDUCTORS
FIELD
Electron spin dynamics in heavily Mn-doped (Ga,Mn)As
期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262109
作者:
Chen L
;
Zhang XH
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浏览/下载:63/6
  |  
提交时间:2011/07/05
SEMICONDUCTORS
TEMPERATURE
GAAS
Band-tail shape and transport near the metal-insulator transition in Si-doped
期刊论文
physical review b, 2010, 卷号: 82, 期号: 12, 页码: art. no. 125202
Misuraca J (Misuraca Jennifer)
;
Trbovic J (Trbovic Jelena)
;
Lu J (Lu Jun)
;
Zhao JH (Zhao Jianhua)
;
Ohno Y (Ohno Yuzo)
;
Ohno H (Ohno Hideo)
;
Xiong P (Xiong Peng)
;
von Molnar S (von Molnar Stephan)
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  |  
浏览/下载:26/0
  |  
提交时间:2010/10/11
PERSISTENT PHOTOCONDUCTIVITY
DX CENTERS
ALXGA1-XAS
GAAS
SEMICONDUCTORS
Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs
期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong)
;
Li JB (Li Jingbo)
;
Li SS (Li Shu-Shen)
;
Peng HW (Peng Haowei)
;
Xia JB (Xia Jian-Bai)
;
Wang LW (Wang Lin-Wang)
;
Wei SH (Wei Su-Huai)
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  |  
浏览/下载:48/0
  |  
提交时间:2010/12/27
IMPURITIES
GAAS1-XNX
NITROGEN
GAINNAS
STATES
TRAPS
Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713
作者:
Zhang XW
;
You JB
;
Yin ZG
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  |  
浏览/下载:71/1
  |  
提交时间:2010/03/08
annealing
carrier density
carrier mobility
diffusion
electrical conductivity
electrical resistivity
hydrogen
II-VI semiconductors
impurity states
interstitials
light transmission
plasma materials processing
semiconductor thin films
sputter deposition
vacancies (crystal)
visible spectra
wide band gap semiconductors
zinc compounds
Design of shallow acceptors in ZnO through compensated donor-acceptor complexes: A density functional calculation
期刊论文
physical review b, 2009, 卷号: 80, 期号: 15, 页码: art.no.153201
Gai YQ (Gai, Yanqin)
;
Li JB (Li, Jingbo)
;
Li SS (Li, Shu-Shen)
;
Xia JB (Xia, Jian-Bai)
;
Yan YF (Yan, Yanfa)
;
Wei SH (Wei, Su-Huai)
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  |  
浏览/下载:132/34
  |  
提交时间:2010/03/08
INITIO MOLECULAR-DYNAMICS
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