Electron spin dynamics in heavily Mn-doped (Ga,Mn)As

CORC > 半导体研究所 > 中国科学院半导体研究所 > 半导体超晶格国家重点实验室

	Electron spin dynamics in heavily Mn-doped (Ga,Mn)As
	Chen L; Zhang XH
刊名	applied physics letters
	2010
卷号	97 期号:26 页码:article no.262109
关键词	SEMICONDUCTORS TEMPERATURE GAAS
ISSN号	0003-6951
通讯作者	zhang, xh, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. xinhuiz@semi.ac.cn
学科主题	半导体物理
收录类别	SCI
资助信息	national natural science foundation of china [10974195, 60836002]; national basic research program of china [2011cb922200, 2007cb924904]; chinese academy of sciences [kjcx2.yw.w09]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	electron spin relaxation and related mechanisms in heavily mn-doped (ga,mn) as are studied by performing time-resolved magneto-optical kerr effect measurements. at low temperature, s-d exchange scattering dominates electron spin relaxation, whereas the bir-aronov-pikus mechanism and mn impurity scattering play important roles at high temperature. the temperature-dependent spin relaxation time exhibits an anomaly around the curie temperature (t-c) that implies that thermal fluctuation is suppressed by short-range correlated spin fluctuation above t-c. (c) 2010 american institute of physics. [doi:10.1063/1.3531754]
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20931]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Chen L,Zhang XH. Electron spin dynamics in heavily Mn-doped (Ga,Mn)As[J]. applied physics letters,2010,97(26):article no.262109.
APA	Chen L,&Zhang XH.(2010).Electron spin dynamics in heavily Mn-doped (Ga,Mn)As.applied physics letters,97(26),article no.262109.
MLA	Chen L,et al."Electron spin dynamics in heavily Mn-doped (Ga,Mn)As".applied physics letters 97.26(2010):article no.262109.