CORC

浏览/检索结果: 共7条,第1-7条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy 期刊论文
physical review b, 2002, 卷号: 66, 期号: 19, 页码: art.no.195321
作者:  Ye XL
收藏  |  浏览/下载:65/0  |  提交时间:2010/08/12
Role of surface defect states in visible luminescence from oxidized hydrogenated amorphous Si hydrogenated amorphous Ge multilayers 期刊论文
applied physics letters, 1999, 卷号: 74, 期号: 25, 页码: 3773-3775
Xu J; He ZH; Chen KJ; Huang XF; Feng DA; Han HX; Wang ZP; Li GH
收藏  |  浏览/下载:39/0  |  提交时间:2010/08/12
Characterization of strain relaxation in As ion implanted Si1-xGex epilayers grown by gas source molecular beam epitaxy 期刊论文
applied physics letters, 1998, 卷号: 72, 期号: 7, 页码: 845-847
Zou LF; Wang ZG; Sun DZ; Fan TW; Liu XF; Zhang JW
收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12
Spatially separated excitons in quantum-dot quantum well structures 期刊论文
physical review b, 1998, 卷号: 57, 期号: 16, 页码: 9780-9786
Chang K; Xia JB
收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 期刊论文
physics of low-dimensional structures, 1997, 卷号: 12, 期号: 0, 页码: 219-225
Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ
收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文
10th international conference on superlattices, microstructures and microdevices, lincoln, nebraska, jul 08-11, 1997
Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/15
Photoluminescence studies of GaAs/AlGaAs single quantum well intermixed by Ga+ ion implantation 期刊论文
solid state communications, 1996, 卷号: 98, 期号: 12, 页码: 1039-1042
Sai N; Zheng BZ; Xu JZ; Zhang PH; Yang XP; Xu ZY
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/17


©版权所有 ©2017 CSpace - Powered by CSpace