The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix

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	The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix
	Wang ZM ; Feng SL ; Lu ZD ; Zhao Q ; Yang XP ; Chen ZG ; Xu ZY ; Zheng HZ
刊名	physics of low-dimensional structures
	1997
卷号	12 期号:0 页码:219-225
关键词	GROWTH INTERDIFFUSION ISLANDS SCALE
ISSN号	0204-3467
通讯作者	wang zm,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要	we investigate the annealing behavior of photoluminescence (pl) from self-assembled inas quantum dots (qds) with different thicknesses gaas cap layers. the diffusion introduced by annealing treatment results in a blue-shift of the qd pl peak, and a decrease in the integrated intensity. the strain present in qds enhances the diffusion, and the qds with the cap layers of different thicknesses will experience a strain of different strength. this can lend to a, better understanding of the larger blue-shift of the pl peak of the deeper buried qds, and the different variance of the full width at half maximum of the luminescence from qds with the cap layers of different thicknesses.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13268]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang ZM,Feng SL,Lu ZD,et al. The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix[J]. physics of low-dimensional structures,1997,12(0):219-225.
APA	Wang ZM.,Feng SL.,Lu ZD.,Zhao Q.,Yang XP.,...&Zheng HZ.(1997).The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix.physics of low-dimensional structures,12(0),219-225.
MLA	Wang ZM,et al."The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix".physics of low-dimensional structures 12.0(1997):219-225.