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Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs 期刊论文
physical review b, 2010, 卷号: 82, 期号: 19, 页码: art. no. 193204
Deng HX (Deng Hui-Xiong); Li JB (Li Jingbo); Li SS (Li Shu-Shen); Peng HW (Peng Haowei); Xia JB (Xia Jian-Bai); Wang LW (Wang Lin-Wang); Wei SH (Wei Su-Huai)
收藏  |  浏览/下载：47/0  |  提交时间：2010/12/27
Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 10, 页码: art.no.100206
Lu SL (Lu, Shulong); Nosho H (Nosho, Hidetaka); Tackeuchi A (Tackeuchi, Atsushi); Bian LF (Bian, Lifeng); Dong JR (Dong, Jianrong); Niu ZC (Niu, Zhichuan)
收藏  |  浏览/下载：175/28  |  提交时间：2010/03/08
ALLOYS  
p-type doping of GaInNAs quaternary alloys 期刊论文
physics letters a, 2008, 卷号: 373, 期号: 1, 页码: 165-168
Shi HL; Duan YF
收藏  |  浏览/下载：234/53  |  提交时间：2010/03/08
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 1, 页码: art.no.011912
Sun Z; Xu ZY; Yang XD; Sun BQ; Ji Y; Zhang SY; Ni HQ; Niu ZC
收藏  |  浏览/下载：97/0  |  提交时间：2010/04/11
Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2566-2569
Sun Z (Sun Zheng); Wang BR (Wang Bao-Rui); Xu ZY (Xu Zhong-Ying); Sun BQ (Sun Bao-Quan); Ji Y (Ji Yang); Ni HQ (Ni Hai-Qiao); Niu ZC (Niu Zhi-Chuan)
收藏  |  浏览/下载：62/0  |  提交时间：2010/04/11
Nonradiative recombination effect on photoluminescence decay dynamics in GaInNAs/GaAs quantum wells - art. no. 61180Z 会议论文
conference on ultrafast phenomena in semiconductors and nanostructure materials x, san jose, ca, jan 23-25, 2006
Sun, Z (Sun, Z.); Xu, ZY (Xu, Z. Y.); Yang, XD (Yang, X. D.); Sun, BQ (Sun, B. Q.); Ji, Y (Ji, Y.); Zhang, SY (Zhang, S. Y.); Ni, HQ (Ni, H. Q.); Niu, ZC (Niu, Z. C.)
收藏  |  浏览/下载：182/36  |  提交时间：2010/03/29
Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers 期刊论文
chinese physics letters, 2003, 卷号: 20, 期号: 8, 页码: 1261-1263
作者:  Xu YQ
收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12
Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers 期刊论文
ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338
作者:  Xu YQ
收藏  |  浏览/下载：395/1  |  提交时间：2010/08/12
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 15, 页码: 2217-2219
作者:  Jiang DS
收藏  |  浏览/下载：104/6  |  提交时间：2010/08/12
Hydrostatic pressure effect on photoluminescence from a GaN0.015As0.985/GaAs quantum well 期刊论文
applied physics letters, 2001, 卷号: 78, 期号: 23, 页码: 3595-3597
Tsang MS; Wang JN; Ge WK; Li GH; Fang ZL; Chen Y; Han HX; Li LH; Pan Z
收藏  |  浏览/下载：98/11  |  提交时间：2010/08/12

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