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半导体研究所 [8]

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半导体物理 [8]

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限定条件	学科主题：半导体物理

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	Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment 期刊论文 journal of applied physics, 2009, 卷号: 105, 期号: 8, 页码: art. no. 083713 作者: Zhang XW; You JB; Yin ZG 收藏 \| 浏览/下载：70/1 \| 提交时间：2010/03/08 annealing carrier density carrier mobility diffusion electrical conductivity electrical resistivity hydrogen II-VI semiconductors impurity states interstitials light transmission plasma materials processing semiconductor thin films sputter deposition vacancies (crystal) visible spectra wide band gap semiconductors zinc compounds
	Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles 期刊论文 physical review b, 2008, 卷号: 78, 期号: 19, 页码: art. no. 195206 Shi LJ; Zhu LF; Zhao YH; Liu BG 收藏 \| 浏览/下载：217/56 \| 提交时间：2010/03/08 ab initio calculations aluminium compounds annealing band structure chromium Curie temperature density functional theory exchange interactions (electron) ferromagnetic materials III-V semiconductors semimagnetic semiconductors total energy vacancies (crystal)
	Dislocation scattering in AlxGa1-xN/GaN heterostructures 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: art. no. 182111 Xu, XQ; Liu, XL; Han, XX; Yuan, HR; Wang, J; Guo, Y; Song, HP; Zheng, GL; Wei, HY; Yang, SY; Zhu, QS; Wang, ZG 收藏 \| 浏览/下载：61/0 \| 提交时间：2010/03/08 aluminium compounds dislocation density electron mobility gallium compounds III-V semiconductors interface roughness semiconductor heterojunctions two-dimensional electron gas wide band gap semiconductors
	Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers 期刊论文 ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338 作者: Xu YQ 收藏 \| 浏览/下载：395/1 \| 提交时间：2010/08/12 band structure differential gain GaInNAs optical gain strain compensated strain mediated STRAIN TEMPERATURE DIODES ALLOYS OFFSET
	Positron-annihilation study of compensation defects in InP 期刊论文 journal of applied physics, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001 Shan YY; Deng AH; Ling CC; Fung S; Ling CD; Zhao YW; Sun TN; Sun NF 收藏 \| 浏览/下载：99/9 \| 提交时间：2010/08/12 UNDOPED SEMIINSULATING INP INDIUM-PHOSPHIDE LIFETIME VACANCY MECHANISMS ACCEPTOR GROWTH GAAS
	Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN 期刊论文 journal of applied physics, 2001, 卷号: 90, 期号: 12, 页码: 6130-6134 Xu XL; Liu HT; Shi CS; Zhao YW; Fung S; Beling CD 收藏 \| 浏览/下载：126/15 \| 提交时间：2010/08/12 LIGHT-EMITTING DIODES GALLIUM NITRIDE YELLOW LUMINESCENCE ELECTRON PHOTOLUMINESCENCE EPILAYERS VACANCIES INTERFACE MECHANISM ENERGY
	Photoluminescence of rapid-thermal annealed Mg-doped GaN films 期刊论文 solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157 Wang LS; Fong WK; Surya C; Cheah KW; Zheng WH; Wang ZG 收藏 \| 浏览/下载：73/5 \| 提交时间：2010/08/12 p-type GaN metalorganic chemical vapor deposition photoluminescence X-ray diffraction rapid-thermal annealing P-TYPE GAN RECOMBINATION EMISSION ENERGY BANDS
	Observation of field-driven blue shift in delta-doped Si n-i-p-i multiple quantum wells 期刊论文 solid state communications, 1999, 卷号: 111, 期号: 11, 页码: 641-645 Cheng W; Xia JB; Jeong MS; Huang XL; Kim JY; Ihm SH; Suh EK; Lee HJ 收藏 \| 浏览/下载：134/0 \| 提交时间：2010/08/12 semiconductors quantum wells photoconductivity and photovoltaics BAND-GAP STARK SHIFT

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