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| Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者: Song HP ; Wei HY; Zhang B
  收藏 | 浏览/下载：198/0 | 提交时间：2010/03/08
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| Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures 期刊论文
journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Li C (Li Chun); Fang GJ (Fang Guojia); Fu Q (Fu Qiang); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong)
收藏 | 浏览/下载：21/0 | 提交时间：2010/04/11
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| Nanostructure in the p-layer and its impacts on amorphous silicon solar cells 期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1841-1846
Liao XB (Liao Xianbo); Du WH (Du Wenhui); Yang XS (Yang Xiesen); Povolny H (Povolny Henry); Xiang XB (Xiang Xianbi); Deng XM (Deng Xunming); Sun K (Sun Kai)
收藏 | 浏览/下载：181/0 | 提交时间：2010/04/11
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| Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文
electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170
作者: Ye XL; Xu B
收藏 | 浏览/下载：77/0 | 提交时间：2010/04/11
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| Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1783-1786
作者: Xu B; Ye XL
收藏 | 浏览/下载：17/0 | 提交时间：2010/03/17
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| Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices 会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
作者: Xu B; Ye XL; Jin P
收藏 | 浏览/下载：92/22 | 提交时间：2010/03/29
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| The evolution of InAs/InAlAs/InGaAlAs quantum dots after rapid thermal annealing 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 59-63
作者: Xu B; Jin P; Li CM; Ye XL
收藏 | 浏览/下载：48/0 | 提交时间：2010/08/12
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| Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者: Zhao DG
收藏 | 浏览/下载：299/12 | 提交时间：2010/08/12
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| Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 395-400
作者: Xu B; Ye XL
收藏 | 浏览/下载：63/0 | 提交时间：2010/08/12
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| Strain relaxation of InP film directly grown on GaAs patterned compliant substrate 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 71-76
作者: Li DB
收藏 | 浏览/下载：42/0 | 提交时间：2010/08/12
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