Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots

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	Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots
	Ye XL; Xu B
刊名	electrochemical and solid state letters
	2006
卷号	9 期号:5 页码:g167-g170
关键词	SEMICONDUCTOR-DEVICES TRANSPORT STATES BISTABILITY VOLTAGE LASERS DIODE
ISSN号	1099-0062
通讯作者	sun, j, chinese acad sci, inst semicond, key lab semicond mat sci, beijing 100083, peoples r china. e-mail: albertjefferson@sohu.com
中文摘要	molecular beam epitaxy is employed to manufacture self-assembled inas/alas quantum-dot resonant tunneling diodes. the resonant tunneling current is superimposed on the thermal current, and together they make up the total electron transport in devices. steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77 or 300 k, and thus resonant tunneling is observed at room temperature in iii-v quantum-dot materials. hysteresis loops in the curves are attributed to hot electron injection/emission process of quantum dots, which indicates the concomitant charging/discharging effect. (c) 2006 the electrochemical society.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10766]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ye XL,Xu B. Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots[J]. electrochemical and solid state letters,2006,9(5):g167-g170.
APA	Ye XL,&Xu B.(2006).Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots.electrochemical and solid state letters,9(5),g167-g170.
MLA	Ye XL,et al."Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots".electrochemical and solid state letters 9.5(2006):g167-g170.