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科研机构
半导体研究所 [54]
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期刊论文 [51]
会议论文 [3]
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2011 [2]
2010 [3]
2009 [2]
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半导体材料 [54]
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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
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浏览/下载:66/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
;
Wang GH
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  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy
期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801
Ji HM (Ji Hai-Ming)
;
Yang T (Yang Tao)
;
Cao YL (Cao Yu-Lian)
;
Xu PF (Xu Peng-Fei)
;
Gu YX (Gu Yong-Xian)
;
Ma
;
WQ (Ma Wen-Quan)
;
Wang ZG (Wang Zhan-Guo)
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  |  
浏览/下载:150/30
  |  
提交时间:2010/04/13
THRESHOLD CURRENT
ROOM-TEMPERATURE
DEPENDENCE
PHOTOLUMINESCENCE
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073111
Ding Y (Ding Y.)
;
Fan WJ (Fan W. J.)
;
Ma BS (Ma B. S.)
;
Xu DW (Xu D. W.)
;
Yoon SF (Yoon S. F.)
;
Liang S (Liang S.)
;
Zhao LJ (Zhao L. J.)
;
Wasiak M (Wasiak M.)
;
Czyszanowski T (Czyszanowski T.)
;
Nakwaski W (Nakwaski W.)
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  |  
浏览/下载:31/0
  |  
提交时间:2010/11/14
VAPOR-PHASE EPITAXY
PHOTOVOLTAGE SPECTROSCOPY
PHOTOLUMINESCENCE
MODES
Preparation and Optical Performance of Freestanding GaN Thick Films
期刊论文
rare metal materials and engineering, 2010, 卷号: 39, 期号: 12, 页码: 2169-2172
作者:
Wei TB
;
Yang JK
;
Duan RF
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  |  
浏览/下载:58/10
  |  
提交时间:2011/07/05
GaN
HVPE
freestanding thick films
stress release
photoluminescence
VAPOR-PHASE EPITAXY
GROWTH
PRESSURE
HVPE
A mini-staged multi-stacked quantum cascade laser for improved optical and thermal performance
期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 7, 页码: art. no. 075023
作者:
Li L
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浏览/下载:81/4
  |  
提交时间:2010/03/08
ROOM-TEMPERATURE
Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 9, 页码: art. no. 096801
作者:
Yang JK
;
Wei TB
;
Duan RF
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  |  
浏览/下载:73/3
  |  
提交时间:2010/03/08
VAPOR-PHASE EPITAXY
DISLOCATIONS
SUBSTRATE
LAYER
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy
会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY
;
Ye, XL
;
Jin, P
;
Chen, YH
;
Wang, ZG
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  |  
浏览/下载:28/0
  |  
提交时间:2010/03/09
INDUCED REFRACTIVE-INDEX
GROWTH
LASERS
GAAS
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition
期刊论文
microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Wang XY (Wang, Xiaoyan)
;
Wang XL (Wang, Xiaoliang)
;
Hu GX (Hu, Guoxin)
;
Wang BZ (Wang, Baozhu)
;
Ma ZY (Ma, Zhiyong)
;
Xiao HL (Xiao, Hongling)
;
Wang CM (Wang, Cuimei)
;
Ran JX (Ran, Junxue)
;
Li JP (Li, Jianping)
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  |  
浏览/下载:32/0
  |  
提交时间:2010/03/29
AlxGa1-xN
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
期刊论文
applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428
作者:
Duan RF
;
Wei TB
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  |  
浏览/下载:29/0
  |  
提交时间:2010/03/29
GaN
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