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Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition 期刊论文
materials, 2015, 卷号: 8, 期号: 9, 页码: 5586-5596
Shuxian Cai; Zhonghua Liu; Ni Zhong; Shengbei Liu; Xingfang Liu
收藏  |  浏览/下载：9/0  |  提交时间：2016/03/29
Effect of gas pressure on the properties of silicon thin film 期刊论文
gongneng cailiao/journal of functional materials, 2011, 卷号: 42, 期号: 8, 页码: 1489-1491
Hao, Hui-Ying; Li, Wei-Min; Zeng, Xiang-Bo; Kong, Guang-Lin; Liao, Xian-Bo
收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Effect of annealing process on the surface roughness in multiple Al implanted4H-SiC 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 7, 页码: 72002
Wu, Hailei; Sun, Guosheng; Yang, Ting; Yan, Guoguo; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Zeng, Yiping; Wen, Jialiang
收藏  |  浏览/下载：28/0  |  提交时间：2012/06/14
Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals 期刊论文
journal of semiconductors, 2010, 卷号: 31, 期号: 1, 页码: 012003-1-012003-5
作者:  Ye Xiaoling;  Xu Bo;  Jin Peng;  Peng Yinsheng;  Ye Xiaoling
收藏  |  浏览/下载：33/0  |  提交时间：2011/08/16
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：139/13  |  提交时间：2010/04/22
Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 7, 页码: 1723-1727
Zhao H; Wang SM; Zhao QX; Sadeghi M; Larsson A
收藏  |  浏览/下载：180/35  |  提交时间：2010/03/08
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:  Zhao J
收藏  |  浏览/下载：43/4  |  提交时间：2011/07/05
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms 期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 5, 页码: 1120-1134
Yang, JL; Gaspar, J; Paul, O
收藏  |  浏览/下载：24/0  |  提交时间：2010/03/08

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