Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

	Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition
	Shuxian Cai ; Zhonghua Liu ; Ni Zhong ; Shengbei Liu ; Xingfang Liu
刊名	materials
	2015
卷号	8 期号:9 页码:5586-5596
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26853]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Shuxian Cai,Zhonghua Liu,Ni Zhong,et al. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition[J]. materials,2015,8(9):5586-5596.
APA	Shuxian Cai,Zhonghua Liu,Ni Zhong,Shengbei Liu,&Xingfang Liu.(2015).Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition.materials,8(9),5586-5596.
MLA	Shuxian Cai,et al."Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition".materials 8.9(2015):5586-5596.