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| Electrodepostied polyaniline films decorated with nano-islands: Characterization and application as anode buffer layers in solar cells 期刊论文
solar energy materials and solar cells, 2011, 卷号: 95, 期号: 2, 页码: 440-445
作者: Liu K ; Tan FR
  收藏 | 浏览/下载：87/5 | 提交时间：2011/07/05
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| Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers 期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1972-1975
Xu Y (Xu Ying); Hu ZH (Hu Zhihua); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Zeng XB (Zeng Xiangbo); Hao HY (Hao Huiying); Liao XB (Liao Xianbo); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo)
收藏 | 浏览/下载：48/0 | 提交时间：2010/04/11
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| Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.063114
作者: Xu B; Ye XL; Jin P
收藏 | 浏览/下载：54/0 | 提交时间：2010/04/11
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| Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏 | 浏览/下载：49/0 | 提交时间：2010/04/11
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| Evolution of wetting layer in InAs/GaAs quantum dot system 期刊论文
nanoscale research letters, 2006, 卷号: 1, 期号: 1, 页码: 79-83
Chen YH (Chen Y. H.); Ye XL (Ye X. L.); Wang ZG (Wang Z. G.)
收藏 | 浏览/下载：59/0 | 提交时间：2010/04/11
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| Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 23, 页码: 5846-5850
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Ren YY (Ren Y. Y.); Wang ZG (Wang Z. G.)
收藏 | 浏览/下载：105/0 | 提交时间：2010/04/11
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| Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method 期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25
Qu BZ; Chen Z; Lu DC; Han P; Liu XG; Wang XH; Wang D; Zhu QS; Wang ZG
收藏 | 浏览/下载：37/0 | 提交时间：2010/08/12
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| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308
作者: Xu B; Li CM; Jin P; Ye XL; Li DB
收藏 | 浏览/下载：97/0 | 提交时间：2010/08/12
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| The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 19-24
Chen Z; Lu DC; Han P; Liu XL; Wang XH; Li YF; Yuan HR; Lu Y; Bing LD; Zhu QS; Wang ZG; Wang XF; Yan L
收藏 | 浏览/下载：41/0 | 提交时间：2010/08/12
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| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 188-194
Chen Z; Lu DH; Yuan HR; Han P; Liu XL; Li YF; Wang XH; Lu Y; Wang ZG
收藏 | 浏览/下载：101/11 | 提交时间：2010/08/12
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