Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method

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	Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
	Qu BZ ; Chen Z ; Lu DC ; Han P ; Liu XG ; Wang XH ; Wang D ; Zhu QS ; Wang ZG
刊名	journal of crystal growth
	2003
卷号	252 期号:1-3 页码:19-25
关键词	nanostructures metalorganic chemical vapor deposition nitrides CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY SIZE DISTRIBUTION GROWTH GAAS DEPENDENCE EMISSION NUMBER
ISSN号	0022-0248
通讯作者	qu bz,acad sinica,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	passivation and low temperature method was carried out to grow ingan/gan quantum dots (qds). atomic force microscope observations were performed to investigate the evolution of the surface morphology of the ingan qds superlattices with increasing the superlattices layer number. the result shows that the size of the qds increases with increasing superlattices layer number. the qds height and diameter increase from 18 and 50 run for the monolayer ingan qds to 37 and 80 urn for the four-stacked ingan qds layers, respectively. this result is considered to be due to the stress field from the sub-layer dots. (c) 2003 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11598]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Qu BZ,Chen Z,Lu DC,et al. Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method[J]. journal of crystal growth,2003,252(1-3):19-25.
APA	Qu BZ.,Chen Z.,Lu DC.,Han P.,Liu XG.,...&Wang ZG.(2003).Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method.journal of crystal growth,252(1-3),19-25.
MLA	Qu BZ,et al."Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method".journal of crystal growth 252.1-3(2003):19-25.