CORC

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CORC

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GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05
Rapid thermal annealing properties of ZnO films grown using methanol as oxidant 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 19, 页码: 6010-6013
Zhang PF (Zhang, P. F.); Liu XL (Liu, X. L.); Wei HY (Wei, H. Y.); Fan HB (Fan, H. B.); Liang ZM (Liang, Z. M.); Jin P (Jin, P.); Yang SY (Yang, S. Y.); Jiao CM (Jiao, C. M.); Zhu QS (Zhu, Q. S.); Wang ZG (Wang, Z. G.)
收藏  |  浏览/下载：21/0  |  提交时间：2010/03/29
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:  Zhang Y
收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
作者:  Jiang DS
收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12
Progress of Si-based nanocrystalline luminescent materials 期刊论文
chinese science bulletin, 2002, 卷号: 47, 期号: 15, 页码: 1233-1242
Peng YC; Zhao XW; Fu GS
收藏  |  浏览/下载：84/0  |  提交时间：2010/08/12
Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH; Ge WK
收藏  |  浏览/下载：99/7  |  提交时间：2010/08/12
Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 501-505
作者:  Jiang DS
收藏  |  浏览/下载：147/24  |  提交时间：2010/08/12
The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates 期刊论文
journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 203-208
作者:  Xu B
收藏  |  浏览/下载：33/0  |  提交时间：2010/08/12
Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001) 会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Zhu JJ; Liu SY; Liang JW
收藏  |  浏览/下载：4/0  |  提交时间：2010/11/15

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