Progress of Si-based nanocrystalline luminescent materials
Peng YC ; Zhao XW ; Fu GS
刊名chinese science bulletin
2002
卷号47期号:15页码:1233-1242
关键词Si-based nanomaterials fabricated method structural characterization light emitting mechanism Si-based photoelectronic devices CHEMICAL-VAPOR-DEPOSITION SELF-ASSEMBLING FORMATION SILICON QUANTUM DOTS LASER-ABLATION OPTICAL-ABSORPTION POROUS SILICON LIGHT-EMISSION PHOTOLUMINESCENCE FABRICATION OXYGEN
ISSN号1001-6538
通讯作者peng yc,hebei univ,coll elect & informat engn,baoding 071002,peoples r china.
中文摘要si-based nanomaterials are some new photoeletronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e. g. si light emitting diode, si laser and integrated si-based photoelectronics. among them are nano-scale porous silicon (ps), si nanocrystalline embedded sio2 (siox, x < 2.0) matrices, si nanoquantum dot and si/sio2 superlattice, etc. at present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (pl) and electroluminescence (el), it is possible for them to lead to a new informational revolution in the early days of the 21st century. in this article, we will mainly review the progress of study on si-based nanomaterials in the past ten years. the involved contents are the fabricated methods, structural characterizations and light emitting properties. finally, we predicate the developed tendency of this field in the following ten years.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/11846]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Peng YC,Zhao XW,Fu GS. Progress of Si-based nanocrystalline luminescent materials[J]. chinese science bulletin,2002,47(15):1233-1242.
APA Peng YC,Zhao XW,&Fu GS.(2002).Progress of Si-based nanocrystalline luminescent materials.chinese science bulletin,47(15),1233-1242.
MLA Peng YC,et al."Progress of Si-based nanocrystalline luminescent materials".chinese science bulletin 47.15(2002):1233-1242.
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