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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载:118/2  |  提交时间:2011/07/05
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
收藏  |  浏览/下载:40/4  |  提交时间:2011/07/05
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏  |  浏览/下载:41/0  |  提交时间:2010/12/28
Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 42, 期号: 9, 页码: 2455-2459
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Liu JQ (Liu J. Q.); Xu B (Xu B.); Ye XL (Ye X. L.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载:265/60  |  提交时间:2010/09/07
Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2009, 卷号: 311, 期号: 8, 页码: 2281-2284
作者:  Ye XL;  Liang S
收藏  |  浏览/下载:32/4  |  提交时间:2010/03/08
Luminescence spectroscopy of ion implanted AlN bulk single crystal 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 31-33
作者:  Ke Jianhong
收藏  |  浏览/下载:7/0  |  提交时间:2010/11/23
Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001
作者:  Wei XC;  Duan RF;  Ding K
收藏  |  浏览/下载:76/19  |  提交时间:2010/03/08
An evidence of defect gettering in GaN 期刊论文
physica b-condensed matter, 2008, 卷号: 403, 期号: 13-16, 页码: 2495-2499
Majid A; Ali A; Zhu JJ; Wang YT; Yang H
收藏  |  浏览/下载:54/7  |  提交时间:2010/03/08
GaN  
Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
nanotechnology, 2007, 卷号: 18, 期号: 1, 页码: art.no.015402
Wu JJ (Wu Jiejun); Zhang GY (Zhang Guoyi); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping)
收藏  |  浏览/下载:122/0  |  提交时间:2010/03/29
Anomalous photoluminescence of InAs quantum dots implanted by Mn ions 期刊论文
physica e-low-dimensional systems & nanostructures, 2007, 卷号: 36, 期号: 2, 页码: 221-225
作者:  Ye XL
收藏  |  浏览/下载:55/0  |  提交时间:2010/03/29


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