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半导体研究所 [13]

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半导体材料 [13]

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限定条件	学科主题：半导体材料

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	19μm quantum cascade infrared photodetectors 期刊论文 Applied Physics Letters, 2013, 卷号: 102, 期号: 19, 页码: 191120 - 191120-4 作者: Zhai, Shen-Qiang; Liu, Jun-Qi; Wang, Xue-Jiao; Zhuo, Ning; Liu, Feng-Qi 收藏 \| 浏览/下载：22/0 \| 提交时间：2014/02/12 Aluminium Compounds Gallium Compounds Iii-v Semiconductors Indium Compounds Infrared Detectors Leakage Currents Photodetectors Photodetectors Bolometers Infrared Submillimeter Wave microWave And radioWave Receivers And Detectors
	MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者: Jia CH; Song HP 收藏 \| 浏览/下载：118/2 \| 提交时间：2011/07/05 Anisotropy Crystal morphology Metalorganic chemical vapor deposition a-Plane InN INDIUM NITRIDE MOVPE GROWTH CUBIC INN SAPPHIRE GAN MBE
	Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402 Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG 收藏 \| 浏览/下载：13/0 \| 提交时间：2012/02/06 FUNDAMENTAL-BAND GAP INDIUM NITRIDE BUFFER LAYER DEPENDENCE SAPPHIRE MOCVD
	Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101 Cao YL (Cao Yu-Lian); Yang T (Yang Tao); Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Gu YX (Gu Yong-Xian); Wang XD (Wang Xiao-Dong); Wang Q (Wang Qing); Ma WQ (Ma Wen-Quan); Chen LH (Chen Liang-Hui) 收藏 \| 浏览/下载：221/51 \| 提交时间：2010/05/24 excited states gallium arsenide III-V semiconductors indium compounds laser tuning optical films quantum dot lasers silicon compounds tantalum compounds TEMPERATURE-DEPENDENCE THRESHOLD PERFORMANCE GAIN
	Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301 作者: Jin P; Wei HY; Song HP 收藏 \| 浏览/下载：310/47 \| 提交时间：2010/03/08 conduction bands III-V semiconductors II-VI semiconductors indium compounds interface states polarisation semiconductor heterojunctions valence bands wide band gap semiconductors X-ray photoelectron spectra zinc compounds
	Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114 作者: Song HP; Wei HY; Zhang B 收藏 \| 浏览/下载：198/0 \| 提交时间：2010/03/08 conduction bands III-V semiconductors indium compounds semiconductor heterojunctions semiconductor materials valence bands X-ray photoelectron spectra
	Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文 physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299 Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD 收藏 \| 浏览/下载：67/3 \| 提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION TEMPERATURE ALN INTERLAYERS PHASE EPITAXY OPTICAL-PROPERTIES SURFACTANT SUBSTRATE STRESS SI REDUCTION SAPPHIRE
	Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107 Zhang BL; Sun GS; Guo Y; Zhang PF; Zhang RQ; Fan HB; Liu XL; Yang SY; Zhu QS; Wang ZG 收藏 \| 浏览/下载：231/42 \| 提交时间：2010/03/08 conduction bands III-V semiconductors indium compounds interface states semiconductor heterojunctions silicon compounds valence bands wide band gap semiconductors X-ray photoelectron spectra
	Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.) 收藏 \| 浏览/下载：20/0 \| 提交时间：2010/04/11 characterization point defects molecular beam epitaxy semiconducting gallium compounds semiconducting indium compounds semiconducting ternary compounds 1.55 MU-M QUANTUM-WELLS TEMPERATURE GAAS
	Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate 期刊论文 journal of crystal growth, 2003, 卷号: 249, 期号: 1-2, 页码: 72-77 作者: Li DB 收藏 \| 浏览/下载：56/0 \| 提交时间：2010/08/12 nanostructures stretched exponential time-resolved photolummescence metalorganic vapor phase epitaxy nitrides InAlGaN INXALYGA1-X-YN QUATERNARY ALLOYS TIME-RESOLVED PHOTOLUMINESCENCE MULTIPLE-QUANTUM WELLS ALINGAN/GAN HETEROSTRUCTURES GAN DECAY LUMINESCENCE SAPPHIRE DEVICES SILICON

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