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CORC

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GaN grown with InGaN as a weakly bonded layer 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:  Wei HY;  Song HP
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:  Wei HY;  Song HP;  Zhang B
收藏  |  浏览/下载：64/2  |  提交时间：2011/07/05
Dislocation core effect scattering in a quasitriangle potential well 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:  Wei HY
收藏  |  浏览/下载：236/104  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：93/1  |  提交时间：2010/03/08
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：65/3  |  提交时间：2010/03/08
Photoluminescence investigation of two-dimensional electron gas in an undoped AlxGa1-xN/GaN heterostructure 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2096-2099
Han, XX; Wu, JJ; Li, JM; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：44/17  |  提交时间：2010/03/17
Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer 期刊论文
journal of applied physics, 2004, 卷号: 96, 期号: 9, 页码: 4982-4988
Lu Y; Cong GW; Liu XL; Lu DC; Zhu QS; Wang XH; Wu JJ; Wang ZG
收藏  |  浏览/下载：78/29  |  提交时间：2010/03/09
The effects of concomitant In and N incorporation on the photoluminescence of GaInNAs 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 2, 页码: 261-266
作者:  Jiang DS
收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12
Size and shape evolution of self-assembled coherent InAs/GaAs quantum dots influenced by seed layer 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
作者:  Xu B
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15

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