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Tunable density of two-dimensional electron gas in GaN-based heterostructures The effects of buffer acceptor and channel width 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 15, 页码: 4507
Enchao Peng, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Haibo Yin, Hong Chen, Chun Feng, Lijuan Jiang, Shenqi Qu, He Kang, Xun Hou and Zhanguo Wang
收藏  |  浏览/下载：22/0  |  提交时间：2014/03/18
In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots 期刊论文
nanoscale research letters, 2013, 卷号: 8, 期号: 1, 页码: 86
Li MF(李密锋)
收藏  |  浏览/下载：10/0  |  提交时间：2013/06/03
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Wang C
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：57/2  |  提交时间：2011/07/05
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101
Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X
收藏  |  浏览/下载：18/0  |  提交时间：2012/01/06
InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.28402
作者:  Hou QF;  Yin HB
收藏  |  浏览/下载：43/6  |  提交时间：2011/07/05
STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS 会议论文
34th ieee photovoltaic specialists conference, philadelphia, pa, 2009
Peng WB (Peng Wenbo); Zeng XB (Zeng Xiangbo); Liu SY (Liu Shiyong); Xiao HB (Xiao Haibo); Kong GL (Kong Guanglin); Yu YD (Yu Yude); Liao XB (Liao Xianbo)
收藏  |  浏览/下载：252/64  |  提交时间：2010/08/16
Fermi-Level Pinning at Metal/High-k Interface Influenced by Electron State Density of Metal Gate 期刊论文
ieee electron device letters, 2010, 卷号: 31, 期号: 10, 页码: 1101-1103
Yang ZC (Yang Z. C.); Huang AP (Huang A. P.); Zheng XH (Zheng X. H.); Xiao ZS (Xiao Z. S.); Liu XY (Liu X. Y.); Zhang XW (Zhang X. W.); Chu PK (Chu Paul K.); Wang WW (Wang W. W.)
收藏  |  浏览/下载：62/0  |  提交时间：2010/11/14
Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043702
Li GD (Li Guodong); Yin H (Yin Hong); Zhu QS (Zhu Qinsheng); Sakaki H (Sakaki Hiroyuki); Jiang C (Jiang Chao)
收藏  |  浏览/下载：204/41  |  提交时间：2010/10/11
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：18/0  |  提交时间：2010/12/12

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