In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

	In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
	Li MF(李密锋)
刊名	nanoscale research letters
	2013
卷号	8 期号:1 页码:86
关键词	InAs quantum dots Sacrificed InAs layer Molecular beam epitaxy Reflection high-energy electron
学科主题	半导体材料
公开日期	2013-06-03
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24136]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Li MF. In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots[J]. nanoscale research letters,2013,8(1):86.
APA	Li MF.(2013).In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots.nanoscale research letters,8(1),86.
MLA	Li MF."In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots".nanoscale research letters 8.1(2013):86.