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| 1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process 期刊论文 ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93 Xu DW; Yoon SF; Ding Y; Tong CZ; Fan WJ; Zhao LJ
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:100/2  |  提交时间:2011/07/05
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| All-Optical Clock Recovery for 20 Gb/s Using an Amplified Feedback DFB Laser 期刊论文 journal of lightwave technology, 2010, 卷号: 28, 期号: 17, 页码: 2521-2525 Sun Y (Sun Yu); Pan JAQ (Pan Jiao Qing); Zhao LJA (Zhao Ling Juan); Chen WX (Chen Weixi); Wang W (Wang Wei); Wang L (Wang Li); Zhao XAF (Zhao Xiao Fan); Lou CY (Lou Cai Yun)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:39/0  |  提交时间:2010/11/14
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| IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文 international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450 作者: Hao GD![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:49/5  |  提交时间:2011/07/05
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| Design of Low-Loss Surface-Plasmon Quantum Cascade Lasers 期刊论文 japanese journal of applied physics, 2009, 卷号: 48, 期号: 12, 页码: art. no. 122101 Lu QY; Zhang W; Wang LJ; Gao Y; Yin W; Zhang QD; Liu WF; Liu FQ; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:53/0  |  提交时间:2010/04/04
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| Optimizing the GaAs capping layer growth of 1.3 mu m InAs/GaAs quantum dots by a combined two-temperature and annealing process at low temperatures 期刊论文 journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5469-5472 作者: Yang T![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:253/54  |  提交时间:2010/03/08
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| Interface of wet oxidized AlGaAs/GaAs distributed Bragg reflectors 期刊论文 applied physics a-materials science & processing, 2007, 卷号: 86, 期号: 1, 页码: 19-22 Li RY (Li R. Y.); Wang ZG (Wang Z. G.); Xu B (Xu B.); Jin P (Jin P.); Guo X (Guo X.); Chen M (Chen M.)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:59/0  |  提交时间:2010/04/11
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| Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors 期刊论文 journal of vacuum science & technology b, 2005, 卷号: 23, 期号: 5, 页码: 2137-2140 作者: Xu B ; Jin P![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:142/18  |  提交时间:2010/03/17
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| Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 241, 期号: 3, 页码: 304-308 作者: Xu B ; Li CM ; Jin P ; Ye XL ; Li DB![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:97/0  |  提交时间:2010/08/12
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| Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358 作者: Xu B ; Jiang DS ; Wang ZG![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:85/7  |  提交时间:2010/08/12
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| Metalorganic chemical vapor deposition of GaNAs alloys using different Ga precursors 期刊论文 journal of crystal growth, 2002, 卷号: 236, 期号: 4, 页码: 516-522 Wei X; Wang GH; Zhang GZ; Zhu XP; Ma XY; Chen LH
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:85/2  |  提交时间:2010/08/12
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