IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES

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	IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES
	Hao GD
刊名	international journal of modern physics b
	2010
卷号	24 期号:27 页码:5439-5450
关键词	Strain effect optical anisotropy A-plane R-plane CONTINUOUS-WAVE OPERATION LIGHT-EMITTING-DIODES LASER-DIODES POLARIZATION ANISOTROPY QUANTUM-WELLS SEMICONDUCTORS
ISSN号	0217-9792
通讯作者	hao, gd, chinese acad sci, inst semicond, key lab semicond mat sci, box 912, beijing 100083, peoples r china. gdhao@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	973 program [2006cb604908, 2006cb921607]; national natural science foundation of china [60625402]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	using the effective-mass hamiltonian for an arbitrary direction wurtzite semiconductor on the basis of k.p theory, we investigate the strain effects on the optical anisotropy in semi-polar and nonpolar gan planes. the optical matrix elements are formulated for an arbitrary direction and calculated for the a- and r-planes. it is found that giant optical anisotropy appears in the a- and r-planes and the biaxial strain significantly changes the polarization properties.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21301]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Hao GD. IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES[J]. international journal of modern physics b,2010,24(27):5439-5450.
APA	Hao GD.(2010).IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES.international journal of modern physics b,24(27),5439-5450.
MLA	Hao GD."IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES".international journal of modern physics b 24.27(2010):5439-5450.