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| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者: Yang T ; Yang XG; Wang KF
  收藏 | 浏览/下载：63/2 | 提交时间：2011/07/05
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| Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者: Xu B; Zhou GY; Ye XL; Zhang HY
收藏 | 浏览/下载：53/5 | 提交时间：2011/07/05
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| Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320
作者: Yang T
收藏 | 浏览/下载：53/5 | 提交时间：2011/07/05
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| Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501
作者: Zhou GY; Zhang HY; Xu B; Ye XL
收藏 | 浏览/下载：67/4 | 提交时间：2011/07/05
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| The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者: Jin P; Ye XL; Zhou XL
收藏 | 浏览/下载：49/4 | 提交时间：2011/07/05
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| Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 3, 页码: article no.32103
Li GD; Jiang C; Zhu QS; Sakaki H
收藏 | 浏览/下载：60/9 | 提交时间：2011/07/05
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| Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者: Jin P
收藏 | 浏览/下载：43/4 | 提交时间：2011/07/15
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| Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102
Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo)
收藏 | 浏览/下载：140/24 | 提交时间：2010/09/07
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| High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801
Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)
收藏 | 浏览/下载：150/30 | 提交时间：2010/04/13
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| Short range scattering mechanism of type-II GaSb/GaAs quantum dots on the transport properties of two-dimensional electron gas 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: art. no. 043702
Li GD (Li Guodong); Yin H (Yin Hong); Zhu QS (Zhu Qinsheng); Sakaki H (Sakaki Hiroyuki); Jiang C (Jiang Chao)
收藏 | 浏览/下载：204/41 | 提交时间：2010/10/11
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