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科研机构
半导体研究所 [100]
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期刊论文 [80]
会议论文 [20]
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2011 [9]
2010 [9]
2009 [6]
2008 [4]
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半导体材料 [100]
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Microscopic study on the carrier distribution in optoelectronic device structures: Experiment and modeling
期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8308, 页码: 83081y
Huang, Wenchao
;
Xia, Hui
;
Wang, Shaowei
;
Deng, Honghai
;
Wei, Peng
;
Li, Lu
;
Liu, Fengqi
;
Li, Zhifeng
;
Li, Tianxin
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Capacitance
Carrier concentration
Characterization
Diffusion
Optoelectronic devices
Photodetectors
Scanning
Semiconductor device structures
Semiconductor devices
Semiconductor quantum wells
Thermionic emission
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF
;
Chen, YH
;
Lei, W
;
Zhou, XL
;
Luo, S
;
Hu, YZ
;
Wang, LJ
;
Yang, T
;
Wang, ZG
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/02/06
RAMAN-SCATTERING
SEMICONDUCTING NANOWIRES
OPTOELECTRONIC DEVICES
PHOSPHIDE NANOWIRES
OPTICAL PHONONS
SILICON
CRYSTALS
SPECTRA
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:
Duan RF
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浏览/下载:83/4
  |  
提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:
Jin P
;
Ye XL
;
Zhou XL
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  |  
浏览/下载:49/4
  |  
提交时间:2011/07/05
SPECTROSCOPY
Dual-depletion-region lumped electroabsorption modulator for low capacitance and expected high bandwidth
期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8308, 页码: 83081w
Shao, Yongbo
;
Zhao, Lingjuan
;
Yu, Hongyan
;
Pan, Jiaoqing
;
Wang, Baojun
;
Zhu, Hongliang
;
Wang, Wei
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  |  
浏览/下载:13/0
  |  
提交时间:2012/06/14
Bandwidth
Capacitance
Circuit theory
Light extinction
Modulators
Optoelectronic devices
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
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  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands
期刊论文
optics express, 2011, 卷号: 19, 期号: 2, 页码: 1065-1071
作者:
Wei TB
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  |  
浏览/下载:43/4
  |  
提交时间:2011/07/05
OUTPUT
ENHANCEMENT
Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate
期刊论文
spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630
作者:
Tang AW
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  |  
浏览/下载:83/5
  |  
提交时间:2011/07/15
SILVER NANORODS
HOT-SPOTS
ACTIVE SUBSTRATE
NANOWIRE ARRAYS
SPECTROSCOPY
SERS
NANOPARTICLES
SENSITIVITY
REDUCTION
STABILITY
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:
Jin P
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  |  
浏览/下载:43/4
  |  
提交时间:2011/07/15
LIGHT-EMITTING-DIODES
OPTICAL-PROPERTIES
TUNING RANGE
NM
EMISSION
SPECTRUM
SPECTROSCOPY
Evaluating 0.53 eVGaInAsSbthermophotovoltaic diode based on an analytical absorption model
期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 9, 页码: art. no. 095002
Wang Y (Wang Y.)
;
Chen NF (Chen N. F.)
;
Zhang XW (Zhang X. W.)
;
Huang TM (Huang T. M.)
;
Yin ZG (Yin Z. G.)
;
Bai YM (Bai Y. M.)
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  |  
浏览/下载:171/19
  |  
提交时间:2010/09/20
OPTICAL DIELECTRIC FUNCTION
DISPERSION-RELATIONS
CARRIER MOBILITIES
PHASE EPITAXY
DOPED GAAS
DEVICES
GASB
INP
ALXGA1-XAS
INGAASSB
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