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Growth Simulations of Self-Assembled Nanowires on Stepped Substrates 期刊论文
ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965
Liang S; Kong DH; Zhu HL; Wang W
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films 期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B; Zhang Z; Zhang R; Fu DY; Xie ZL; Lu H; Schaff WJ; Song LH; Cui YC; Hua XM; Han P; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：196/52  |  提交时间：2010/04/28
Narrowing of band gap and low-temperature spin glass behavior of FeNi co-doped ZnO nanowires 期刊论文
epl, 2009, 卷号: 87, 期号: 5, 页码: art. no. 57004
Iqbal J; Liu XF; Majid A; Yu DP; Yu RH
收藏  |  浏览/下载：92/34  |  提交时间：2010/03/08
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 12, 页码: 3543-3546
Wu, BP; Wu, DH; Ni, HQ; Huang, SS; Zhan, F; Xiong, YH; Xu, YQ; Niu, ZC
收藏  |  浏览/下载：44/1  |  提交时间：2010/03/08
Investigation of Mn-doped Si films prepared by magnetron cosputtering 期刊论文
journal of crystal growth, 2006, 卷号: 291, 期号: 1, 页码: 239-242
作者:  Yin ZG
收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate 期刊论文
electronics letters, 2006, 卷号: 42, 期号: 13, 页码: 757-758
Yang XR (Yang X. R.); Xu B (Xu B.); Wang ZG (Wang Z. G.); Jin P (Jin P.); Liang P (Liang P.); Hu Y (Hu Y.); Sun H (Sun H.); Chen YH (Chen Y. H.); Liu FL (Liu F. L.)
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
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