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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08
Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文
science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814
Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H
收藏  |  浏览/下载：325/7  |  提交时间：2010/04/11
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
作者:  Jiang DS
收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12
Structural and optical characterization of InAs nanostructures grown on high-index InP substrates 期刊论文
journal of crystal growth, 1999, 卷号: 200, 期号: 1-2, 页码: 321-325
Li HX; Daniels-Race T; Wang ZG
收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12
808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice 期刊论文
journal of crystal growth, 1997, 卷号: 175, 期号: 0, 页码: 1004-1008
Zhu DH; Wang ZG; Liang JB; Xu B; Zhu ZP; Zhang J; Gong Q; Li SY
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/17
RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING 期刊论文
physics letters a, 1994, 卷号: 189, 期号: 5, 页码: 423-427
XU TB; ZHU PR; LI DQ; REN TQ; SUN HL; WAN SK
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15

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