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科研机构
半导体研究所 [13]
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期刊论文 [10]
会议论文 [3]
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2011 [1]
2010 [1]
2007 [2]
2006 [2]
2004 [2]
2003 [1]
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学科主题
半导体材料 [13]
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Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:
Wei HY
;
Song HP
;
Zhang B
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浏览/下载:64/2
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
CORE-LEVEL PHOTOEMISSION
SB-DOPED SNO2
INN
GROWTH
GAN
NAXWO3
ALLOYS
GREEN
STATE
Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:185/32
  |  
提交时间:2010/05/04
alloying
annealing
electrical conductivity
excitons
II-VI semiconductors
magnesium compounds
MOCVD coatings
photoluminescence
positron annihilation
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
SEMICONDUCTORS
EMISSION
ORIGIN
DIODES
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate
期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793
Wang XL (Wang Xiaoliang)
;
Wang CM (Wang Cuimei)
;
Hu GX (Hu Guoxin)
;
Mao HL (Mao Hongling)
;
Fang CB (Fang Cebao)
;
Wang JX (Wang Junxi)
;
Ran JX (Ran Junxue)
;
Li HP (Li Hanping)
;
Li JM (Li Jinmin)
;
Wang ZG (Wang, Zhanguo)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/03/29
2DEG
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
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  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 5, 页码: 1251-1254
作者:
Wei HY
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  |  
浏览/下载:61/0
  |  
提交时间:2010/04/11
OPTICAL-PROPERTIES
RAMAN-SCATTERING
EPILAYERS
LUMINESCENCE
ALINGAN
PHONON
LAYERS
FILMS
ALN
GAN
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
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  |  
浏览/下载:167/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85
Wu, JJ
;
Li, DB
;
Lu, Y
;
Han, XX
;
Li, JM
;
Wei, HY
;
Kang, TT
;
Wang, XH
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
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  |  
浏览/下载:74/0
  |  
提交时间:2010/03/17
cracks
Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers
期刊论文
人工晶体学报, 2004, 卷号: 33, 期号: 4, 页码: 539-544
作者:
Li Dabing
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  |  
浏览/下载:9/0
  |  
提交时间:2010/11/23
Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 84-90
作者:
Li DB
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  |  
浏览/下载:54/0
  |  
提交时间:2010/08/12
surfaces
X-ray diffraction
growth from high temperature solutions
metalorganic chemical vapor deposition
nitrides
semiconducting III-V materials
TIME-RESOLVED PHOTOLUMINESCENCE
QUANTUM-WELL
LUMINESCENCE
DIODES
GAN
Thermodynamics and kinetics analysis of in-situ synthesizing AlN
期刊论文
science in china series e-technological sciences, 2002, 卷号: 45, 期号: 3, 页码: 249-254
Zheng XH
;
Wang Q
;
Zhou ML
;
Li CG
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  |  
浏览/下载:35/0
  |  
提交时间:2010/08/12
Al-Mg alloy
in-situ synthesis
AlN
Mg
thermo-dynamical
dynamics
THERMAL-CONDUCTIVITY
ALUMINUM NITRIDE
HETEROSTRUCTURE
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