Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers

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	Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers
	Li Dabing
刊名	人工晶体学报
	2004
卷号	33 期号:4 页码:539-544
中文摘要	in order to improve crystal quality for growth of quaternary inalgan, a series of inalgan films were grown on gan buffer layer under different growth temperatures and carrier gases by low-pressure metal-organic vapor phase epitaxy. energy dispersive spectroscopy (eds) was employed to measure the chemical composition of the quaternary, high resolution x-ray diffraction (hrxrd) and photoluminescence (pl) technique were used to characterize structural and optical properties of the epilayers, respectively. the pl spectra of inalgan show with and without the broad-deep level emission when only n2 and a n2+h2 mixture were used as carrier gas, respectively. at pressure of 1.01×104 pa and with mixed gases of nitrogen and hydrogen as carrier gas, different alloy compositions of the films were obtained by changing the growth temperature while keeping the fluxes of precursors of indium (in), aluminum (al), gallium (ga) and nitrogen (n2) constant. a combination of hrxrd and pl measurements enable us to explore the relative optimum growth parameters-growth temperature between 850℃ and 870℃,using mixed gas of n2+h2 as carrier gas.
英文摘要	in order to improve crystal quality for growth of quaternary inalgan, a series of inalgan films were grown on gan buffer layer under different growth temperatures and carrier gases by low-pressure metal-organic vapor phase epitaxy. energy dispersive spectroscopy (eds) was employed to measure the chemical composition of the quaternary, high resolution x-ray diffraction (hrxrd) and photoluminescence (pl) technique were used to characterize structural and optical properties of the epilayers, respectively. the pl spectra of inalgan show with and without the broad-deep level emission when only n2 and a n2+h2 mixture were used as carrier gas, respectively. at pressure of 1.01×104 pa and with mixed gases of nitrogen and hydrogen as carrier gas, different alloy compositions of the films were obtained by changing the growth temperature while keeping the fluxes of precursors of indium (in), aluminum (al), gallium (ga) and nitrogen (n2) constant. a combination of hrxrd and pl measurements enable us to explore the relative optimum growth parameters-growth temperature between 850℃ and 870℃,using mixed gas of n2+h2 as carrier gas.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:06:26导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:06:26z (gmt). no. of bitstreams: 1 4741.pdf: 254697 bytes, checksum: 6817f4bb0a9840fed329c6f7b1ebd545 (md5) previous issue date: 2004; 国家自然科学基金,国家973计划; 中科院半导体所
学科主题	半导体材料
收录类别	CSCD
资助信息	国家自然科学基金,国家973计划
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17449]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Dabing. Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers[J]. 人工晶体学报,2004,33(4):539-544.
APA	Li Dabing.(2004).Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers.人工晶体学报,33(4),539-544.
MLA	Li Dabing."Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers".人工晶体学报 33.4(2004):539-544.