CORC

浏览/检索结果: 共10条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer 期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 6, 页码: 1705-1708
Ma ZY (Ma Zhi-Yong); Wang XL (Wang Xiao-Liang); Hu GX (Hu Guo-Xin); Ran JX (Ran Jun-Xue); Xiao HL (Xiao Hong-Ling); Luo WJ (Luo Wei-Jun); Tang J (Tang Jian); Li JP (Li Jian-Ping); Li JM (Li Jin-Min)
收藏  |  浏览/下载:70/0  |  提交时间:2010/03/29
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903
Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo)
收藏  |  浏览/下载:59/0  |  提交时间:2010/04/11
Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
作者:  Jiang DS
收藏  |  浏览/下载:55/0  |  提交时间:2010/08/12
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
Realization of quantum cascade laser operating at room temperature 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 285-289
作者:  Jin P;  Li CM
收藏  |  浏览/下载:35/0  |  提交时间:2010/08/12
Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者:  Xu B
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
Effect of rapid thermal annealing on InGaAs/GaAs quantum wells 期刊论文
journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 352-355
Zhuang QD; Li JM; Zeng YP; Yoon SF; Zheng HQ; Kong MY; Lin LY
收藏  |  浏览/下载:61/0  |  提交时间:2010/08/12
Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 556-559
Liu JP; Kong MY; Liu XF; Li JP; Huang DD; Li LX; Sun DZ
收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
Annealing behavior of InAs/GaAs quantum dot structures 期刊论文
journal of electronic materials, 1998, 卷号: 27, 期号: 2, 页码: 59-61
Wang ZM; Feng SL; Lu ZD; Zhao Q; Yang XP; Chen ZG; Xu ZY; Zheng HZ
收藏  |  浏览/下载:43/0  |  提交时间:2010/08/12
PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE 期刊论文
chinese physics letters, 1994, 卷号: 11, 期号: 4, 页码: 239-241
LIU Y; XIAO XR; LI XP; REN XM; ZHENG HQ; ZENG YP; YAN CH; SUN DZ
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15


©版权所有 ©2017 CSpace - Powered by CSpace