Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells

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	Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
	Jiang DS
刊名	journal of crystal growth
	2003
卷号	253 期号:1-4 页码:155-160
关键词	interdiffusion post-annealing quantum wells GaInNAs/GaAs MOLECULAR-BEAM EPITAXY CARRIER LOCALIZATION GAINNAS LUMINESCENCE ORIGIN GAASN
ISSN号	0022-0248
通讯作者	bian lf,chinese acad sci,inst semicond,state key lab superlattices & microstruct,beijing 100083,peoples r china.
中文摘要	thermal annealing of gainas/ganas quantum wells (qws) as well as other nitrogen- and indium-contained qw structures grown by molecular beam epitaxy and its effect on optical properties are investigated. the photoluminescence (pl) and photovoltaic (pv) spectra of annealed gainas/ganas qws show that the luminescence properties become degraded due to the n diffusion from the ganas barrier layers to the gainas well layer. meantime, the annealing-induced blueshift of the pl peak in this qw system is mainly induced by the change of in distribution, suggesting that the in reorganization is greatly assisted by the n-induced defects. the elucidation of annealing effect in gainas/ganas qw samples is helpful for a better understanding to the annealing effect in the gainnas/gaas qws. (c) 2003 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11546]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiang DS. Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells[J]. journal of crystal growth,2003,253(1-4):155-160.
APA	Jiang DS.(2003).Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells.journal of crystal growth,253(1-4),155-160.
MLA	Jiang DS."Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells".journal of crystal growth 253.1-4(2003):155-160.