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Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:  Yang T;  Yang XG;  Wang KF
收藏  |  浏览/下载：65/2  |  提交时间：2011/07/05
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers 期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting); Deng SK (Deng Shukang); Shen LX (Shen Lanxian); Yang PZ (Yang Peizhi); Tu JL (Tu Jielei); Liao H (Liao Hua); Xu YQ (Xu Yingqiang); Niu ZC (Niu Zhichuan)
收藏  |  浏览/下载：41/0  |  提交时间：2010/12/28
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.)
收藏  |  浏览/下载：20/0  |  提交时间：2010/04/11
Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 498-508
Zuo R (Zuo Ran); Zhang H (Zhang Hong); Liu XL (Liu Xiang-lin)
收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11
Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells 期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 3, 页码: 548-551
Bian LF; Jiang D; Liang XG; Lu SL
收藏  |  浏览/下载：41/18  |  提交时间：2010/03/09
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:  Zhang SM
收藏  |  浏览/下载：230/30  |  提交时间：2010/08/12
Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 248-253
作者:  Zhang SM
收藏  |  浏览/下载：293/3  |  提交时间：2010/08/12
Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文
journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128
Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW
收藏  |  浏览/下载：125/0  |  提交时间：2010/08/12

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