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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：119/2  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：86/4  |  提交时间：2011/07/05
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06
Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates 期刊论文
applied surface science, 2009, 卷号: 255, 期号: 6, 页码: 3664-3668
Gao HY; Yan FW; Zhang Y; Li JM; Zeng YP; Wang JX
收藏  |  浏览/下载：165/24  |  提交时间：2010/03/08
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:  Xu B
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者:  Yang H;  Zhao DG;  Zhu JJ;  Yang H;  Zhang SM
收藏  |  浏览/下载：182/43  |  提交时间：2010/03/08
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：68/3  |  提交时间：2010/03/08
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 498-508
Zuo R (Zuo Ran); Zhang H (Zhang Hong); Liu XL (Liu Xiang-lin)
收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11
Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer 期刊论文
journal of physics d-applied physics, 2006, 卷号: 39, 期号: 2, 页码: 269-273
Shen WJ; Wang J; Wang QY; Duan Y; Zeng YP
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11

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