CORC

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CORC

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Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：84/4  |  提交时间：2011/07/05
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:  Zhang Y
收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 期刊论文
micron, 2004, 卷号: 35, 期号: 6, 页码: 475-480
Luo, XH; Wang, RM; Zhang, XP; Zhang, HZ; Yu, DP; Luo, MC
收藏  |  浏览/下载：145/32  |  提交时间：2010/03/09
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer 会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC
收藏  |  浏览/下载：18/1  |  提交时间：2010/10/29
Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method 期刊论文
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 19-25
Qu BZ; Chen Z; Lu DC; Han P; Liu XG; Wang XH; Wang D; Zhu QS; Wang ZG
收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12
Statistical investigation on morphology development of gallium nitride in initial growth stage 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 77-84
Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D
收藏  |  浏览/下载：76/3  |  提交时间：2010/08/12
Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 2-3, 页码: 354-358
作者:  Xu B;  Jiang DS;  Wang ZG
收藏  |  浏览/下载：84/7  |  提交时间：2010/08/12
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 816-819
Li JM; Sun GS; Zhu SR; Wang L; Luo MC; Zhang FF; Lin LY
收藏  |  浏览/下载：79/6  |  提交时间：2010/08/12
Structural characterization of cubic GaN grown on GaAs(001) substrates 期刊论文
chinese journal of electronics, 2001, 卷号: 10, 期号: 2, 页码: 219-222
Zheng XH; Qu B; Wang YT; Yang H; Liang JW; Han JY
收藏  |  浏览/下载：93/4  |  提交时间：2010/08/12

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