|
已选(0)清除
条数/页： 排序方式：
|
| Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 041907
Zhang Q (Zhang Q.); Wang XQ (Wang X. Q.); Yin CM (Yin C. M.); Xu FJ (Xu F. J.); Tang N (Tang N.); Shen B (Shen B.); Chen YH (Chen Y. H.); Chang K (Chang K.); Ge WK (Ge W. K.); Ishitani Y (Ishitani Y.); Yoshikawa A (Yoshikawa A.)
  收藏 | 浏览/下载：277/88 | 提交时间：2010/09/07
|
| Growth and properties of magnetron cosputtering grown Mn(x)Ge(1-x)on Si(001) 期刊论文
solid state communications, 2006, 卷号: 137, 期号: 3, 页码: 126-128
作者: Yin ZG
收藏 | 浏览/下载：85/0 | 提交时间：2010/04/11
|
| Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2002, 卷号: 17, 期号: 9, 页码: 957-960
Lu LW; Yan H; Yang CL; Xie MH; Wang ZG; Wang J; Ge WK
收藏 | 浏览/下载：51/0 | 提交时间：2010/08/12
|
| Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH; Ge WK
收藏 | 浏览/下载：99/7 | 提交时间：2010/08/12
|
| Pulsed excimer laser annealing of Mg-doped cubic GaN 期刊论文
journal of crystal growth, 2000, 卷号: 209, 期号: 1, 页码: 203-207
作者: Zhao DG
收藏 | 浏览/下载：46/0 | 提交时间：2010/08/12
|
| Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition 期刊论文
applied physics a-materials science & processing, 2000, 卷号: 70, 期号: 4, 页码: 449-451
Luo GL; Chen PY; Lin XF; Tsien P; Fan TW
收藏 | 浏览/下载：51/0 | 提交时间：2010/08/12
|
| Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 期刊论文
journal of crystal growth, 1999, 卷号: 201, 期号: 0, 页码: 530-533
Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J
收藏 | 浏览/下载：56/0 | 提交时间：2010/08/12
|
| Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers 会议论文
10th international conference on molecular beam epitaxy (mbe-x), cannes, france, aug 31-sep 04, 1998
Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J
收藏 | 浏览/下载：14/0 | 提交时间：2010/11/15
|
| Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions 期刊论文
thin solid films, 1999, 卷号: 346, 期号: 1-2, 页码: 91-95
Poulsen PR; Wang MX; Xu J; Li W; Chen KJ; Wang GH; Feng D
收藏 | 浏览/下载：33/0 | 提交时间：2010/08/12
|
| Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy 期刊论文
journal of crystal growth, 1997, 卷号: 181, 期号: 4, 页码: 441-445
Liu JP; Liu XF; Li JP; Sun DZ; Kong MY
收藏 | 浏览/下载：19/0 | 提交时间：2010/11/17
|
